Gettering of carbon and oxygen in silicon processing

The control of carbon and oxygen is of great importance in today's silicon materials and device processing, and it will become a critical parameter in the immediate future for VLSI device processing. Although considerable technology and some understanding are available today in the control of o...

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Veröffentlicht in:	Journal of the Electrochemical Society 1985-01, Vol.132 (7), p.1721-1725
Hauptverfasser:	BAILEY, W. E, BOWLING, R. A, BEAN, K. E
Format:	Artikel
Sprache:	eng
Schlagworte:	Applied sciences Electronics Exact sciences and technology Microelectronic fabrication (materials and surfaces technology) Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Online-Zugang:	Volltext
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