The effect of metal work function on current conduction in metal-insulator-semiconductor tunnel junctions

The effect of metal work function on current conduction in metal-insulator-semiconductor (MIS) tunnel junctions has been investigated both experimentally and theoretically. MIS junctions on 2 and 10 Ω cm silicon substrates have been fabricated with both aluminum and magnesium contacts. It is shown t...

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Veröffentlicht in:	Journal of applied physics 1985-01, Vol.57 (2), p.373-376
Hauptverfasser:	CAMPORESE, D. S, PULFREY, D. L
Format:	Artikel
Sprache:	eng
Schlagworte:	Applied sciences Electronics Exact sciences and technology Interfaces Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Online-Zugang:	Volltext
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