Significant Enhancement in the Thermoelectric Performance of Aluminum-Doped ZnO Tuned by Pore Structure

In this paper, 2 atom % Al-doped ZnO (AZO) was prepared by the co-precipitation method together with sparking plasma sintering (SPS) treatment. The as-synthesized AZO powders show the morphology of hollow hexagonal towers, which result in a high porosity of 50.6% in the bulk sample consolidated by S...

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Veröffentlicht in:ACS applied materials & interfaces 2020-11, Vol.12 (46), p.51669-51678
Hauptverfasser: Zhou, Bo, Chen, Lili, Li, Chongyang, Qi, Ning, Chen, Zhiquan, Su, Xianli, Tang, XinFeng
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container_end_page 51678
container_issue 46
container_start_page 51669
container_title ACS applied materials & interfaces
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creator Zhou, Bo
Chen, Lili
Li, Chongyang
Qi, Ning
Chen, Zhiquan
Su, Xianli
Tang, XinFeng
description In this paper, 2 atom % Al-doped ZnO (AZO) was prepared by the co-precipitation method together with sparking plasma sintering (SPS) treatment. The as-synthesized AZO powders show the morphology of hollow hexagonal towers, which result in a high porosity of 50.6% in the bulk sample consolidated by SPS sintering at 400 °C, and the porosity decreases gradually with increasing sintering temperature up to 1000 °C. Positron annihilation measurements reveal that even after sintering at 1000 °C, there are still a considerable number of small pores. A high electrical conductivity of 3 × 105 S m–1 is achieved at room temperature for the AZO sample sintered at 1000 °C, while the absolute values of Seebeck coefficient keep at relatively high values between 59 and 144 μV K–1 in the measurement temperature range of 27–500 °C, leading to a high power factor of 3.4 × 10–3 W m–1 K–2. On the other hand, the pores in AZO act as strong phonon scattering centers, and an extremely low thermal conductivity of 1.5 W m–1 K–1 measured at room temperature is obtained for AZO sintered at 400 °C. Due to the residual pores in the 1000 °C-sintered sample, the thermal conductivity is still relatively low. As a result, a maximum ZT of 0.275 measured at 500 °C is obtained in this sample, which is the highest ZT reported for ZnO around this temperature.
doi_str_mv 10.1021/acsami.0c16506
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fullrecord <record><control><sourceid>proquest_cross</sourceid><recordid>TN_cdi_proquest_miscellaneous_2458034300</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>2458034300</sourcerecordid><originalsourceid>FETCH-LOGICAL-a373t-83cf3142b7ce0f648b0e530a694efb028bbd10c0fe1a0ce45620b7db051da1cf3</originalsourceid><addsrcrecordid>eNp1kD1rwzAQhkVpoWnatbPGUnB6smTHGUOafkAggaRLFyPLp0TBklLJHvLv65DQrdO9HM97cA8hjwxGDFL2IlWU1oxAsTyD_IoM2ESIpEiz9PovC3FL7mLcA-Q8hWxAtmuzdUYbJV1L524nnUKLfTaOtjukmx0G67FB1Qaj6AqD9sGeKOo1nTadNa6zyas_YE2_3ZJuOten6khXPiBdt6FTbRfwntxo2UR8uMwh-Xqbb2YfyWL5_jmbLhLJx7xNCq40ZyKtxgpB56KoADMOMp8I1BWkRVXVDBRoZBIUiixPoRrXFWSslqzvDsnT-e4h-J8OY1taExU2jXTou1imIiuACw7Qo6MzqoKPMaAuD8FYGY4lg_JktDwbLS9G-8LzudDvy73vgus_-Q_-BeCgeeU</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>2458034300</pqid></control><display><type>article</type><title>Significant Enhancement in the Thermoelectric Performance of Aluminum-Doped ZnO Tuned by Pore Structure</title><source>ACS Publications</source><creator>Zhou, Bo ; Chen, Lili ; Li, Chongyang ; Qi, Ning ; Chen, Zhiquan ; Su, Xianli ; Tang, XinFeng</creator><creatorcontrib>Zhou, Bo ; Chen, Lili ; Li, Chongyang ; Qi, Ning ; Chen, Zhiquan ; Su, Xianli ; Tang, XinFeng</creatorcontrib><description>In this paper, 2 atom % Al-doped ZnO (AZO) was prepared by the co-precipitation method together with sparking plasma sintering (SPS) treatment. The as-synthesized AZO powders show the morphology of hollow hexagonal towers, which result in a high porosity of 50.6% in the bulk sample consolidated by SPS sintering at 400 °C, and the porosity decreases gradually with increasing sintering temperature up to 1000 °C. Positron annihilation measurements reveal that even after sintering at 1000 °C, there are still a considerable number of small pores. A high electrical conductivity of 3 × 105 S m–1 is achieved at room temperature for the AZO sample sintered at 1000 °C, while the absolute values of Seebeck coefficient keep at relatively high values between 59 and 144 μV K–1 in the measurement temperature range of 27–500 °C, leading to a high power factor of 3.4 × 10–3 W m–1 K–2. On the other hand, the pores in AZO act as strong phonon scattering centers, and an extremely low thermal conductivity of 1.5 W m–1 K–1 measured at room temperature is obtained for AZO sintered at 400 °C. Due to the residual pores in the 1000 °C-sintered sample, the thermal conductivity is still relatively low. As a result, a maximum ZT of 0.275 measured at 500 °C is obtained in this sample, which is the highest ZT reported for ZnO around this temperature.</description><identifier>ISSN: 1944-8244</identifier><identifier>EISSN: 1944-8252</identifier><identifier>DOI: 10.1021/acsami.0c16506</identifier><language>eng</language><publisher>American Chemical Society</publisher><subject>Functional Inorganic Materials and Devices</subject><ispartof>ACS applied materials &amp; interfaces, 2020-11, Vol.12 (46), p.51669-51678</ispartof><rights>2020 American Chemical Society</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-a373t-83cf3142b7ce0f648b0e530a694efb028bbd10c0fe1a0ce45620b7db051da1cf3</citedby><cites>FETCH-LOGICAL-a373t-83cf3142b7ce0f648b0e530a694efb028bbd10c0fe1a0ce45620b7db051da1cf3</cites><orcidid>0000-0001-7555-919X ; 0000-0003-4428-6461 ; 0000-0002-9518-7837</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://pubs.acs.org/doi/pdf/10.1021/acsami.0c16506$$EPDF$$P50$$Gacs$$H</linktopdf><linktohtml>$$Uhttps://pubs.acs.org/doi/10.1021/acsami.0c16506$$EHTML$$P50$$Gacs$$H</linktohtml><link.rule.ids>314,780,784,2765,27076,27924,27925,56738,56788</link.rule.ids></links><search><creatorcontrib>Zhou, Bo</creatorcontrib><creatorcontrib>Chen, Lili</creatorcontrib><creatorcontrib>Li, Chongyang</creatorcontrib><creatorcontrib>Qi, Ning</creatorcontrib><creatorcontrib>Chen, Zhiquan</creatorcontrib><creatorcontrib>Su, Xianli</creatorcontrib><creatorcontrib>Tang, XinFeng</creatorcontrib><title>Significant Enhancement in the Thermoelectric Performance of Aluminum-Doped ZnO Tuned by Pore Structure</title><title>ACS applied materials &amp; interfaces</title><addtitle>ACS Appl. Mater. Interfaces</addtitle><description>In this paper, 2 atom % Al-doped ZnO (AZO) was prepared by the co-precipitation method together with sparking plasma sintering (SPS) treatment. The as-synthesized AZO powders show the morphology of hollow hexagonal towers, which result in a high porosity of 50.6% in the bulk sample consolidated by SPS sintering at 400 °C, and the porosity decreases gradually with increasing sintering temperature up to 1000 °C. Positron annihilation measurements reveal that even after sintering at 1000 °C, there are still a considerable number of small pores. A high electrical conductivity of 3 × 105 S m–1 is achieved at room temperature for the AZO sample sintered at 1000 °C, while the absolute values of Seebeck coefficient keep at relatively high values between 59 and 144 μV K–1 in the measurement temperature range of 27–500 °C, leading to a high power factor of 3.4 × 10–3 W m–1 K–2. On the other hand, the pores in AZO act as strong phonon scattering centers, and an extremely low thermal conductivity of 1.5 W m–1 K–1 measured at room temperature is obtained for AZO sintered at 400 °C. Due to the residual pores in the 1000 °C-sintered sample, the thermal conductivity is still relatively low. As a result, a maximum ZT of 0.275 measured at 500 °C is obtained in this sample, which is the highest ZT reported for ZnO around this temperature.</description><subject>Functional Inorganic Materials and Devices</subject><issn>1944-8244</issn><issn>1944-8252</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2020</creationdate><recordtype>article</recordtype><recordid>eNp1kD1rwzAQhkVpoWnatbPGUnB6smTHGUOafkAggaRLFyPLp0TBklLJHvLv65DQrdO9HM97cA8hjwxGDFL2IlWU1oxAsTyD_IoM2ESIpEiz9PovC3FL7mLcA-Q8hWxAtmuzdUYbJV1L524nnUKLfTaOtjukmx0G67FB1Qaj6AqD9sGeKOo1nTadNa6zyas_YE2_3ZJuOten6khXPiBdt6FTbRfwntxo2UR8uMwh-Xqbb2YfyWL5_jmbLhLJx7xNCq40ZyKtxgpB56KoADMOMp8I1BWkRVXVDBRoZBIUiixPoRrXFWSslqzvDsnT-e4h-J8OY1taExU2jXTou1imIiuACw7Qo6MzqoKPMaAuD8FYGY4lg_JktDwbLS9G-8LzudDvy73vgus_-Q_-BeCgeeU</recordid><startdate>20201118</startdate><enddate>20201118</enddate><creator>Zhou, Bo</creator><creator>Chen, Lili</creator><creator>Li, Chongyang</creator><creator>Qi, Ning</creator><creator>Chen, Zhiquan</creator><creator>Su, Xianli</creator><creator>Tang, XinFeng</creator><general>American Chemical Society</general><scope>AAYXX</scope><scope>CITATION</scope><scope>7X8</scope><orcidid>https://orcid.org/0000-0001-7555-919X</orcidid><orcidid>https://orcid.org/0000-0003-4428-6461</orcidid><orcidid>https://orcid.org/0000-0002-9518-7837</orcidid></search><sort><creationdate>20201118</creationdate><title>Significant Enhancement in the Thermoelectric Performance of Aluminum-Doped ZnO Tuned by Pore Structure</title><author>Zhou, Bo ; Chen, Lili ; Li, Chongyang ; Qi, Ning ; Chen, Zhiquan ; Su, Xianli ; Tang, XinFeng</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-a373t-83cf3142b7ce0f648b0e530a694efb028bbd10c0fe1a0ce45620b7db051da1cf3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2020</creationdate><topic>Functional Inorganic Materials and Devices</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Zhou, Bo</creatorcontrib><creatorcontrib>Chen, Lili</creatorcontrib><creatorcontrib>Li, Chongyang</creatorcontrib><creatorcontrib>Qi, Ning</creatorcontrib><creatorcontrib>Chen, Zhiquan</creatorcontrib><creatorcontrib>Su, Xianli</creatorcontrib><creatorcontrib>Tang, XinFeng</creatorcontrib><collection>CrossRef</collection><collection>MEDLINE - Academic</collection><jtitle>ACS applied materials &amp; interfaces</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Zhou, Bo</au><au>Chen, Lili</au><au>Li, Chongyang</au><au>Qi, Ning</au><au>Chen, Zhiquan</au><au>Su, Xianli</au><au>Tang, XinFeng</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Significant Enhancement in the Thermoelectric Performance of Aluminum-Doped ZnO Tuned by Pore Structure</atitle><jtitle>ACS applied materials &amp; interfaces</jtitle><addtitle>ACS Appl. Mater. Interfaces</addtitle><date>2020-11-18</date><risdate>2020</risdate><volume>12</volume><issue>46</issue><spage>51669</spage><epage>51678</epage><pages>51669-51678</pages><issn>1944-8244</issn><eissn>1944-8252</eissn><abstract>In this paper, 2 atom % Al-doped ZnO (AZO) was prepared by the co-precipitation method together with sparking plasma sintering (SPS) treatment. The as-synthesized AZO powders show the morphology of hollow hexagonal towers, which result in a high porosity of 50.6% in the bulk sample consolidated by SPS sintering at 400 °C, and the porosity decreases gradually with increasing sintering temperature up to 1000 °C. Positron annihilation measurements reveal that even after sintering at 1000 °C, there are still a considerable number of small pores. A high electrical conductivity of 3 × 105 S m–1 is achieved at room temperature for the AZO sample sintered at 1000 °C, while the absolute values of Seebeck coefficient keep at relatively high values between 59 and 144 μV K–1 in the measurement temperature range of 27–500 °C, leading to a high power factor of 3.4 × 10–3 W m–1 K–2. On the other hand, the pores in AZO act as strong phonon scattering centers, and an extremely low thermal conductivity of 1.5 W m–1 K–1 measured at room temperature is obtained for AZO sintered at 400 °C. Due to the residual pores in the 1000 °C-sintered sample, the thermal conductivity is still relatively low. As a result, a maximum ZT of 0.275 measured at 500 °C is obtained in this sample, which is the highest ZT reported for ZnO around this temperature.</abstract><pub>American Chemical Society</pub><doi>10.1021/acsami.0c16506</doi><tpages>10</tpages><orcidid>https://orcid.org/0000-0001-7555-919X</orcidid><orcidid>https://orcid.org/0000-0003-4428-6461</orcidid><orcidid>https://orcid.org/0000-0002-9518-7837</orcidid></addata></record>
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title Significant Enhancement in the Thermoelectric Performance of Aluminum-Doped ZnO Tuned by Pore Structure
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-12-25T18%3A28%3A14IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_cross&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Significant%20Enhancement%20in%20the%20Thermoelectric%20Performance%20of%20Aluminum-Doped%20ZnO%20Tuned%20by%20Pore%20Structure&rft.jtitle=ACS%20applied%20materials%20&%20interfaces&rft.au=Zhou,%20Bo&rft.date=2020-11-18&rft.volume=12&rft.issue=46&rft.spage=51669&rft.epage=51678&rft.pages=51669-51678&rft.issn=1944-8244&rft.eissn=1944-8252&rft_id=info:doi/10.1021/acsami.0c16506&rft_dat=%3Cproquest_cross%3E2458034300%3C/proquest_cross%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=2458034300&rft_id=info:pmid/&rfr_iscdi=true