Design calculations for submicron gate-length AlGaAs/GaAs modulation-doped FET structures using carrier saturation velocity/charge-control model

dc and small-signal ac characteristics of AlGaAs/GaAs modulation-doped FET's have been calculated by combining the conventional charge-control model with the carrier velocity saturation concept in realistic submicron gate structures. For the desired threshold voltage and the maximum gate voltag...

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Veröffentlicht in:	Solid-state electronics 1985-10, Vol.28 (10), p.997-1005
Hauptverfasser:	Das, Mukunda B., Roszak, Michael L.
Format:	Artikel
Sprache:	eng
Schlagworte:	Applied sciences Electronics Exact sciences and technology Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Transistors
Online-Zugang:	Volltext
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