Design calculations for submicron gate-length AlGaAs/GaAs modulation-doped FET structures using carrier saturation velocity/charge-control model
dc and small-signal ac characteristics of AlGaAs/GaAs modulation-doped FET's have been calculated by combining the conventional charge-control model with the carrier velocity saturation concept in realistic submicron gate structures. For the desired threshold voltage and the maximum gate voltag...
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| Veröffentlicht in: | Solid-state electronics 1985-10, Vol.28 (10), p.997-1005 |
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| container_title | Solid-state electronics |
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| creator | Das, Mukunda B. Roszak, Michael L. |
| description | dc and small-signal ac characteristics of AlGaAs/GaAs modulation-doped FET's have been calculated by combining the conventional charge-control model with the carrier velocity saturation concept in realistic submicron gate structures. For the desired threshold voltage and the maximum gate voltage swing, the designer basically selects the thickness of the
n-AlGaAs layer, for the preferred doping concentration, from the design graphs provided. Representative theoretical I/V characteristics and saturation current and transconductance versus gate voltage graphs are presented for the 0.25 μm and 0.8 μm gate-length structures with and without the presence of source and drain series resistances. |
| doi_str_mv | 10.1016/0038-1101(85)90030-9 |
| format | Article |
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n-AlGaAs layer, for the preferred doping concentration, from the design graphs provided. Representative theoretical I/V characteristics and saturation current and transconductance versus gate voltage graphs are presented for the 0.25 μm and 0.8 μm gate-length structures with and without the presence of source and drain series resistances.</description><identifier>ISSN: 0038-1101</identifier><identifier>EISSN: 1879-2405</identifier><identifier>DOI: 10.1016/0038-1101(85)90030-9</identifier><language>eng</language><publisher>Oxford: Elsevier Ltd</publisher><subject>Applied sciences ; Electronics ; Exact sciences and technology ; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices ; Transistors</subject><ispartof>Solid-state electronics, 1985-10, Vol.28 (10), p.997-1005</ispartof><rights>1985</rights><rights>1986 INIST-CNRS</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c345t-bb6c1607074d683fda63be70037486ee7e586f05478869d56c58491cff1d6eb33</citedby><cites>FETCH-LOGICAL-c345t-bb6c1607074d683fda63be70037486ee7e586f05478869d56c58491cff1d6eb33</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://www.sciencedirect.com/science/article/pii/0038110185900309$$EHTML$$P50$$Gelsevier$$H</linktohtml><link.rule.ids>314,776,780,3537,27901,27902,65306</link.rule.ids><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=8754486$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>Das, Mukunda B.</creatorcontrib><creatorcontrib>Roszak, Michael L.</creatorcontrib><title>Design calculations for submicron gate-length AlGaAs/GaAs modulation-doped FET structures using carrier saturation velocity/charge-control model</title><title>Solid-state electronics</title><description>dc and small-signal ac characteristics of AlGaAs/GaAs modulation-doped FET's have been calculated by combining the conventional charge-control model with the carrier velocity saturation concept in realistic submicron gate structures. For the desired threshold voltage and the maximum gate voltage swing, the designer basically selects the thickness of the
n-AlGaAs layer, for the preferred doping concentration, from the design graphs provided. Representative theoretical I/V characteristics and saturation current and transconductance versus gate voltage graphs are presented for the 0.25 μm and 0.8 μm gate-length structures with and without the presence of source and drain series resistances.</description><subject>Applied sciences</subject><subject>Electronics</subject><subject>Exact sciences and technology</subject><subject>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</subject><subject>Transistors</subject><issn>0038-1101</issn><issn>1879-2405</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>1985</creationdate><recordtype>article</recordtype><recordid>eNp9kLtuFDEUhkcIJJbAG1C4QAgKZ-0d36ZBWiUQIkWigdry2GcmRl57sT2R8hY8Mp7sKiWNb_rPd3y-rntPySUlVGwJ6RWm7fhJ8c9DuxE8vOg2VMkB7xjhL7vNc-R196aU34SQnaBk0_29huLniKwJdgmm-hQLmlJGZRkP3uYU0Wwq4ABxrvdoH27MvmzXBR2SO1dgl47g0LevP1GpebF1yVDQUnycGzhnD41n2utTGj1ASNbXx629N3kGbFOsOYUVCOFt92oyocC7837R_Wrcq-_47sfN7dX-Dtue8YrHUVgqiCSSOaH6yRnRjyDbmJIpASCBKzERzqRSYnBcWK7YQO00USdg7PuL7uOJe8zpzwKl6oMvFkIwEdJS9I5x0e8kb0F2CjYZpWSY9DH7g8mPmhK96terW7261YrrJ_16aGUfznxTmtwpm2h9ea5VkrP20Rb7copBm_WhidLFeogWnM9gq3bJ_7_PP3Zqm2I</recordid><startdate>19851001</startdate><enddate>19851001</enddate><creator>Das, Mukunda B.</creator><creator>Roszak, Michael L.</creator><general>Elsevier Ltd</general><general>Elsevier Science</general><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>8FD</scope><scope>H8D</scope><scope>L7M</scope></search><sort><creationdate>19851001</creationdate><title>Design calculations for submicron gate-length AlGaAs/GaAs modulation-doped FET structures using carrier saturation velocity/charge-control model</title><author>Das, Mukunda B. ; Roszak, Michael L.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c345t-bb6c1607074d683fda63be70037486ee7e586f05478869d56c58491cff1d6eb33</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>1985</creationdate><topic>Applied sciences</topic><topic>Electronics</topic><topic>Exact sciences and technology</topic><topic>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</topic><topic>Transistors</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Das, Mukunda B.</creatorcontrib><creatorcontrib>Roszak, Michael L.</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Technology Research Database</collection><collection>Aerospace Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Solid-state electronics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Das, Mukunda B.</au><au>Roszak, Michael L.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Design calculations for submicron gate-length AlGaAs/GaAs modulation-doped FET structures using carrier saturation velocity/charge-control model</atitle><jtitle>Solid-state electronics</jtitle><date>1985-10-01</date><risdate>1985</risdate><volume>28</volume><issue>10</issue><spage>997</spage><epage>1005</epage><pages>997-1005</pages><issn>0038-1101</issn><eissn>1879-2405</eissn><abstract>dc and small-signal ac characteristics of AlGaAs/GaAs modulation-doped FET's have been calculated by combining the conventional charge-control model with the carrier velocity saturation concept in realistic submicron gate structures. For the desired threshold voltage and the maximum gate voltage swing, the designer basically selects the thickness of the
n-AlGaAs layer, for the preferred doping concentration, from the design graphs provided. Representative theoretical I/V characteristics and saturation current and transconductance versus gate voltage graphs are presented for the 0.25 μm and 0.8 μm gate-length structures with and without the presence of source and drain series resistances.</abstract><cop>Oxford</cop><pub>Elsevier Ltd</pub><doi>10.1016/0038-1101(85)90030-9</doi><tpages>9</tpages></addata></record> |
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| issn | 0038-1101 1879-2405 |
| language | eng |
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| source | Elsevier ScienceDirect Journals |
| subjects | Applied sciences Electronics Exact sciences and technology Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Transistors |
| title | Design calculations for submicron gate-length AlGaAs/GaAs modulation-doped FET structures using carrier saturation velocity/charge-control model |
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