Direct measurement of the energy distribution of hot electrons in silicon dioxide

The energy distribution of hot electrons in high-field stressed amorphous silicon dioxide (SiO2) films have been measured using a vacuum emission technique. Electrons having average energies ≳2 eV and an energy relaxation length of λ≊32 Å are observed at all fields studied (≳ 2 MV/cm). However, cont...

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Veröffentlicht in:	Journal of applied physics 1985-01, Vol.58 (3), p.1302-1313
Hauptverfasser:	BRORSON, S. D, DIMARIA, D. J, FISCHETTI, M. V, PESAVENTO, F. L, SOLOMON, P. M, DONG, D. W
Format:	Artikel
Sprache:	eng
Schlagworte:	Condensed matter: electronic structure, electrical, magnetic, and optical properties Conductivity phenomena in semiconductors and insulators Electronic transport in condensed matter Exact sciences and technology High-field and nonlinear effects Physics
Online-Zugang:	Volltext
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