Electrical switching speed of the double-heterostructure optoelectronic switch

Electrical switching speed of the double-heterostructure optoelectronic switch

The electrical switching speed of a new double-heterostructure optoelectronic switch (designated DOES) is measured in a relaxation oscillator circuit. A minimum value of capacitance was required to obtain oscillations. The turn-on speed was measured to be 100 ps. The turn-off speed was limited to th...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Veröffentlicht in:IEEE transactions on electron devices 1987-05, Vol.34 (5), p.961-965
Hauptverfasser: Taylor, G.W., Simmons, J.G., Mand, R.S., Cho, A.Y.
Format: Artikel
Sprache:eng
Schlagworte:
Applied sciences
Electronics
Exact sciences and technology
Optoelectronic devices
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
container_end_page 965
container_issue 5
container_start_page 961
container_title IEEE transactions on electron devices
container_volume 34
creator Taylor, G.W.
Simmons, J.G.
Mand, R.S.
Cho, A.Y.
description The electrical switching speed of a new double-heterostructure optoelectronic switch (designated DOES) is measured in a relaxation oscillator circuit. A minimum value of capacitance was required to obtain oscillations. The turn-on speed was measured to be 100 ps. The turn-off speed was limited to the RC pull-up time.
doi_str_mv 10.1109/T-ED.1987.23031
format Article
fullrecord <record><control><sourceid>proquest_RIE</sourceid><recordid>TN_cdi_proquest_miscellaneous_24490799</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><ieee_id>1486742</ieee_id><sourcerecordid>24492006</sourcerecordid><originalsourceid>FETCH-LOGICAL-c350t-3d3030210181d675f4a565ee817a3cd743f943e0a3ec37de7694a684fb12091e3</originalsourceid><addsrcrecordid>eNqNkD1PwzAQhi0EEqUwM7BkQGxp7dix4xG14UOqYCmz5ToXapTGwXaE-PckbQUr0-mk53l19yJ0TfCMECzn67RczogsxCyjmJITNCF5LlLJGT9FE4xJkUpa0HN0EcLHsHLGsgl6KRsw0VujmyR82Wi2tn1PQgdQJa5O4haSyvWbBtItRPAuRN-b2HtIXBcd7GXXWnOUL9FZrZsAV8c5RW8P5XrxlK5eH58X96vU0BzHlFbDiTgjw1Gk4iKvmc55DlAQoampBKO1ZBSwpmCoqEBwyTQvWL0hGZYE6BTdHXI77z57CFHtbDDQNLoF1weVMSYzjPm_QCykHMD5ATTDk8FDrTpvd9p_K4LVWLBaq3KpxoLVvuDBuD1G6zDUV3vdGht-NcExpXLEbg6YBYC_UFZwwTL6A5NCg8c</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>24490799</pqid></control><display><type>article</type><title>Electrical switching speed of the double-heterostructure optoelectronic switch</title><source>IEEE Electronic Library (IEL)</source><creator>Taylor, G.W. ; Simmons, J.G. ; Mand, R.S. ; Cho, A.Y.</creator><creatorcontrib>Taylor, G.W. ; Simmons, J.G. ; Mand, R.S. ; Cho, A.Y.</creatorcontrib><description>The electrical switching speed of a new double-heterostructure optoelectronic switch (designated DOES) is measured in a relaxation oscillator circuit. A minimum value of capacitance was required to obtain oscillations. The turn-on speed was measured to be 100 ps. The turn-off speed was limited to the RC pull-up time.</description><identifier>ISSN: 0018-9383</identifier><identifier>EISSN: 1557-9646</identifier><identifier>DOI: 10.1109/T-ED.1987.23031</identifier><identifier>CODEN: IETDAI</identifier><language>eng</language><publisher>New York, NY: IEEE</publisher><subject>Applied sciences ; Electronics ; Exact sciences and technology ; Optoelectronic devices ; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</subject><ispartof>IEEE transactions on electron devices, 1987-05, Vol.34 (5), p.961-965</ispartof><rights>1988 INIST-CNRS</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c350t-3d3030210181d675f4a565ee817a3cd743f943e0a3ec37de7694a684fb12091e3</citedby></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/1486742$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>314,780,784,796,27923,27924,54757</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/1486742$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&amp;idt=7603391$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>Taylor, G.W.</creatorcontrib><creatorcontrib>Simmons, J.G.</creatorcontrib><creatorcontrib>Mand, R.S.</creatorcontrib><creatorcontrib>Cho, A.Y.</creatorcontrib><title>Electrical switching speed of the double-heterostructure optoelectronic switch</title><title>IEEE transactions on electron devices</title><addtitle>TED</addtitle><description>The electrical switching speed of a new double-heterostructure optoelectronic switch (designated DOES) is measured in a relaxation oscillator circuit. A minimum value of capacitance was required to obtain oscillations. The turn-on speed was measured to be 100 ps. The turn-off speed was limited to the RC pull-up time.</description><subject>Applied sciences</subject><subject>Electronics</subject><subject>Exact sciences and technology</subject><subject>Optoelectronic devices</subject><subject>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</subject><issn>0018-9383</issn><issn>1557-9646</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>1987</creationdate><recordtype>article</recordtype><recordid>eNqNkD1PwzAQhi0EEqUwM7BkQGxp7dix4xG14UOqYCmz5ToXapTGwXaE-PckbQUr0-mk53l19yJ0TfCMECzn67RczogsxCyjmJITNCF5LlLJGT9FE4xJkUpa0HN0EcLHsHLGsgl6KRsw0VujmyR82Wi2tn1PQgdQJa5O4haSyvWbBtItRPAuRN-b2HtIXBcd7GXXWnOUL9FZrZsAV8c5RW8P5XrxlK5eH58X96vU0BzHlFbDiTgjw1Gk4iKvmc55DlAQoampBKO1ZBSwpmCoqEBwyTQvWL0hGZYE6BTdHXI77z57CFHtbDDQNLoF1weVMSYzjPm_QCykHMD5ATTDk8FDrTpvd9p_K4LVWLBaq3KpxoLVvuDBuD1G6zDUV3vdGht-NcExpXLEbg6YBYC_UFZwwTL6A5NCg8c</recordid><startdate>19870501</startdate><enddate>19870501</enddate><creator>Taylor, G.W.</creator><creator>Simmons, J.G.</creator><creator>Mand, R.S.</creator><creator>Cho, A.Y.</creator><general>IEEE</general><general>Institute of Electrical and Electronics Engineers</general><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>8FD</scope><scope>H8D</scope><scope>L7M</scope><scope>7SP</scope></search><sort><creationdate>19870501</creationdate><title>Electrical switching speed of the double-heterostructure optoelectronic switch</title><author>Taylor, G.W. ; Simmons, J.G. ; Mand, R.S. ; Cho, A.Y.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c350t-3d3030210181d675f4a565ee817a3cd743f943e0a3ec37de7694a684fb12091e3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>1987</creationdate><topic>Applied sciences</topic><topic>Electronics</topic><topic>Exact sciences and technology</topic><topic>Optoelectronic devices</topic><topic>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Taylor, G.W.</creatorcontrib><creatorcontrib>Simmons, J.G.</creatorcontrib><creatorcontrib>Mand, R.S.</creatorcontrib><creatorcontrib>Cho, A.Y.</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Technology Research Database</collection><collection>Aerospace Database</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>Electronics &amp; Communications Abstracts</collection><jtitle>IEEE transactions on electron devices</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Taylor, G.W.</au><au>Simmons, J.G.</au><au>Mand, R.S.</au><au>Cho, A.Y.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Electrical switching speed of the double-heterostructure optoelectronic switch</atitle><jtitle>IEEE transactions on electron devices</jtitle><stitle>TED</stitle><date>1987-05-01</date><risdate>1987</risdate><volume>34</volume><issue>5</issue><spage>961</spage><epage>965</epage><pages>961-965</pages><issn>0018-9383</issn><eissn>1557-9646</eissn><coden>IETDAI</coden><abstract>The electrical switching speed of a new double-heterostructure optoelectronic switch (designated DOES) is measured in a relaxation oscillator circuit. A minimum value of capacitance was required to obtain oscillations. The turn-on speed was measured to be 100 ps. The turn-off speed was limited to the RC pull-up time.</abstract><cop>New York, NY</cop><pub>IEEE</pub><doi>10.1109/T-ED.1987.23031</doi><tpages>5</tpages></addata></record>
fulltext fulltext_linktorsrc
identifier ISSN: 0018-9383
ispartof IEEE transactions on electron devices, 1987-05, Vol.34 (5), p.961-965
issn 0018-9383
1557-9646
language eng
recordid cdi_proquest_miscellaneous_24490799
source IEEE Electronic Library (IEL)
subjects Applied sciences
Electronics
Exact sciences and technology
Optoelectronic devices
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
title Electrical switching speed of the double-heterostructure optoelectronic switch
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-10T12%3A16%3A42IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_RIE&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Electrical%20switching%20speed%20of%20the%20double-heterostructure%20optoelectronic%20switch&rft.jtitle=IEEE%20transactions%20on%20electron%20devices&rft.au=Taylor,%20G.W.&rft.date=1987-05-01&rft.volume=34&rft.issue=5&rft.spage=961&rft.epage=965&rft.pages=961-965&rft.issn=0018-9383&rft.eissn=1557-9646&rft.coden=IETDAI&rft_id=info:doi/10.1109/T-ED.1987.23031&rft_dat=%3Cproquest_RIE%3E24492006%3C/proquest_RIE%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=24490799&rft_id=info:pmid/&rft_ieee_id=1486742&rfr_iscdi=true