Growth and characterization of cubic SiC single-crystal films on Si

Growth and characterization of cubic SiC single-crystal films on Si

Morphological and electrical characterization results are presented for cubic SiC films grown by chemical vapor deposition on single-crystal Si substrates. The films, up to 40 microns thick, were characterized by optical microscopy, (SEM), (TEM), electron channeling, surface profilometry, and Hall m...

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Veröffentlicht in:Journal of the Electrochemical Society 1987-06, Vol.134 (6), p.1558-1565
Hauptverfasser: Powell, J. Anthony, Matus, L. G., Kuczmarski, Maria A.
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Applied sciences
Exact sciences and technology
Other techniques and industries
Solid-State Physics
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container_issue 6
container_start_page 1558
container_title Journal of the Electrochemical Society
container_volume 134
creator Powell, J. Anthony
Matus, L. G.
Kuczmarski, Maria A.
description Morphological and electrical characterization results are presented for cubic SiC films grown by chemical vapor deposition on single-crystal Si substrates. The films, up to 40 microns thick, were characterized by optical microscopy, (SEM), (TEM), electron channeling, surface profilometry, and Hall measurements. A variety of morphological features observed on the SiC films are described. Electrical measurements showed a decrease in the electron mobility with increasing electron carrier concentration, similar to that observed in Si. Room-temperature electron mobilities up to 520 sq cm/V-s (at an electron carrier concentration of 5 x 10 to the 16th/cu cm) were measured. Finally, a number of parameters believed to be important in the growth process were investigated, and some discussion is given of their possible effects on the film characteristics.
doi_str_mv 10.1149/1.2100708
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source Institute of Physics Journals; NASA Technical Reports Server
subjects Applied sciences
Exact sciences and technology
Other techniques and industries
Solid-State Physics
title Growth and characterization of cubic SiC single-crystal films on Si
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