The Anisotropy of Interface Mobility in F.C.C. Crystals
The mechanism, kinetics and anisotropy of f.c.c. crystal growth are investigated by computer simulation method on a lattice model of a single‐component two‐phase system. It is established that the growth mechanism changes in the region of the temperature where a phase transition of the second kind t...
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Veröffentlicht in: | Physica status solidi. A, Applied research Applied research, 1984-01, Vol.81 (1), p.163-169 |
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creator | Esin, V. O. Daniltuk, V. I. Porozkov, V. N. |
description | The mechanism, kinetics and anisotropy of f.c.c. crystal growth are investigated by computer simulation method on a lattice model of a single‐component two‐phase system. It is established that the growth mechanism changes in the region of the temperature where a phase transition of the second kind takes place in the corresponding two‐dimensional lattices. Equilibrium and non‐equilibrium forms of an f.c.c. crystal are constructed for a wide range of values of the temperature and phase transition driving force dLμ/kT.
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[Russian Text Ignored].</description><subject>Cross-disciplinary physics: materials science; rheology</subject><subject>Exact sciences and technology</subject><subject>Materials science</subject><subject>Methods of crystal growth; physics of crystal growth</subject><subject>Physics</subject><subject>Theory and models of crystal growth; physics of crystal growth, crystal morphology and orientation</subject><issn>0031-8965</issn><issn>1521-396X</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>1984</creationdate><recordtype>article</recordtype><recordid>eNqFkM1P3DAQxa0KpC4fZ645VNyyzNhxbKunVehSBIWqgOjN8rpj1SUkix3U5r8naBEVJzSHd_m9NzOPsQOEOQLwo3XObs45gkZAlB_YDCXHUpj65xabAQgstanlR7aT8x8AqEDBjKnr31Qsupj7IfXrsehDcdoNlILzVHzrV7GNw1jErljOm2mKJo15cG3eY9thEtp_0V12s_xy3Xwtzy9PTpvFeekr1LLkv2SttBRBh2CQwBgiDWFFXGhAvUIyhJ7IOK6w8s6valACOBcm1N6T2GWHm9x16h8eKQ_2PmZPbes66h-z5VUlp4fNBB5tQJ_6nBMFu07x3qXRItjnguxzQfZ_QZPj00u0y961IbnOx_xqMzVMN76LaSO4AZywzxvsb2xpfG-5_X51tXhzS7lxxzzQv1e3S3e2VkJJe3txYo8bBfJM_rBKPAFA-JEX</recordid><startdate>19840116</startdate><enddate>19840116</enddate><creator>Esin, V. O.</creator><creator>Daniltuk, V. I.</creator><creator>Porozkov, V. N.</creator><general>WILEY-VCH Verlag</general><general>WILEY‐VCH Verlag</general><general>Wiley-VCH</general><scope>BSCLL</scope><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>8BQ</scope><scope>8FD</scope><scope>JG9</scope></search><sort><creationdate>19840116</creationdate><title>The Anisotropy of Interface Mobility in F.C.C. Crystals</title><author>Esin, V. O. ; Daniltuk, V. I. ; Porozkov, V. N.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c4185-2d567853f8ff91e099ee80fbe238018b1e9e1cee9a2714cacb607302239f6cce3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>1984</creationdate><topic>Cross-disciplinary physics: materials science; rheology</topic><topic>Exact sciences and technology</topic><topic>Materials science</topic><topic>Methods of crystal growth; physics of crystal growth</topic><topic>Physics</topic><topic>Theory and models of crystal growth; physics of crystal growth, crystal morphology and orientation</topic><toplevel>online_resources</toplevel><creatorcontrib>Esin, V. O.</creatorcontrib><creatorcontrib>Daniltuk, V. I.</creatorcontrib><creatorcontrib>Porozkov, V. N.</creatorcontrib><collection>Istex</collection><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>METADEX</collection><collection>Technology Research Database</collection><collection>Materials Research Database</collection><jtitle>Physica status solidi. A, Applied research</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Esin, V. O.</au><au>Daniltuk, V. I.</au><au>Porozkov, V. N.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>The Anisotropy of Interface Mobility in F.C.C. Crystals</atitle><jtitle>Physica status solidi. A, Applied research</jtitle><addtitle>phys. stat. sol. (a)</addtitle><date>1984-01-16</date><risdate>1984</risdate><volume>81</volume><issue>1</issue><spage>163</spage><epage>169</epage><pages>163-169</pages><issn>0031-8965</issn><eissn>1521-396X</eissn><coden>PSSABA</coden><abstract>The mechanism, kinetics and anisotropy of f.c.c. crystal growth are investigated by computer simulation method on a lattice model of a single‐component two‐phase system. It is established that the growth mechanism changes in the region of the temperature where a phase transition of the second kind takes place in the corresponding two‐dimensional lattices. Equilibrium and non‐equilibrium forms of an f.c.c. crystal are constructed for a wide range of values of the temperature and phase transition driving force dLμ/kT.
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subjects | Cross-disciplinary physics: materials science rheology Exact sciences and technology Materials science Methods of crystal growth physics of crystal growth Physics Theory and models of crystal growth physics of crystal growth, crystal morphology and orientation |
title | The Anisotropy of Interface Mobility in F.C.C. Crystals |
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