Performance Comparison of State-of-the-Art 300A/1700V Si IGBT and SiC MOSFET Power Modules

Performance Comparison of State-of-the-Art 300A/1700V Si IGBT and SiC MOSFET Power Modules

Recently, Mitsubishi Electric began the rollout of second generation silicon carbide (SiC) technology in 1200 V and 1700 V class power modules. These new modules, shown in Figure 1, provide greater efficiency and higher power density than previous SiC generations as well as the latest silicon (Si) t...

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Veröffentlicht in:IEEE power electronics magazine 2020-09, Vol.7 (3), p.44-51
Hauptverfasser: Rogers, Michael J., Motto, Eric R., Steiner, Mark
Format: Magazinearticle
Sprache:eng
Schlagworte:
Density measurement
Insulated gate bipolar transistors
Inverters
Modules
MOSFET
MOSFETs
Power system measurement
Schottky diodes
Silicon carbide
Switching loss
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Beschreibung
Zusammenfassung:Recently, Mitsubishi Electric began the rollout of second generation silicon carbide (SiC) technology in 1200 V and 1700 V class power modules. These new modules, shown in Figure 1, provide greater efficiency and higher power density than previous SiC generations as well as the latest silicon (Si) technology, which enables new capabilities in energy, transportation, and medical applications.
ISSN:2329-9207
2329-9215
DOI:10.1109/MPEL.2020.3011776