Anomalous behavior of In adatoms during droplet epitaxy on the AlGaAs surfaces

Semiconductor quantum dots (QDs) in the InAs/AlGaAs system are of great importance due to their promising optoelectronic and nanophotonic applications. However, control over emission wavelength governed by Al content in the matrix is still limited because of an influence of surface Al content on QD...

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Veröffentlicht in:	Nanotechnology 2020-11, Vol.31 (48), p.485604-485604
Hauptverfasser:	Balakirev, Sergey V, Solodovnik, Maxim S, Eremenko, Mikhail M, Chernenko, Natalia E, Ageev, Oleg A
Format:	Artikel
Sprache:	eng
Schlagworte:	crystal growth droplet epitaxy GaAs indium monte carlo simulations nanostructures nucleation
Online-Zugang:	Volltext
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