Stacked thin-film photoelectrode using iron oxide
For photoanodes of materials with low mobilities it is advantageous to use several layers of thickness less than the space-charge region, thereby decreasing recombination. To compensate losses due to lack of absorption, several layers should be placed successively in the light path. Some experimenta...
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Veröffentlicht in: | Journal of applied physics 1984-01, Vol.56 (3), p.874-876 |
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container_title | Journal of applied physics |
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creator | ITOH, K BOCKRIS, J. O.-M |
description | For photoanodes of materials with low mobilities it is advantageous to use several layers of thickness less than the space-charge region, thereby decreasing recombination. To compensate losses due to lack of absorption, several layers should be placed successively in the light path. Some experimental verification is described. |
doi_str_mv | 10.1063/1.334028 |
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fullrecord | <record><control><sourceid>proquest_cross</sourceid><recordid>TN_cdi_proquest_miscellaneous_24432868</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>24432868</sourcerecordid><originalsourceid>FETCH-LOGICAL-c351t-8dc85c59733b94c1ce53869328fcd99bfd1185448af26f31f4014938447ce5233</originalsourceid><addsrcrecordid>eNo90EFLxDAQhuEgCtZV8Cf0IOKla6aTtMlRFleFBQ_qOWTTxI22zZq0oP_eShdPc3l4GT5CLoEugVZ4C0tERktxRDKgQhY15_SYZJSWUAhZy1NyltIHpQACZUbgZdDm0zb5sPN94Xzb5ftdGIJtrRliaGw-Jt-_5z6GPg_fvrHn5MTpNtmLw12Qt_X96-qx2Dw_PK3uNoVBDkMhGiO44bJG3EpmwFiOopJYCmcaKbeumT7gjAntysohOEaBSRSM1RMtERfkeu7uY_gabRpU55Oxbat7G8akSsamWCUmeDNDE0NK0Tq1j77T8UcBVX-bKFDzJhO9OjR1Mrp1UffGp38vaS1kxfEXEK1ePw</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>24432868</pqid></control><display><type>article</type><title>Stacked thin-film photoelectrode using iron oxide</title><source>AIP Digital Archive</source><creator>ITOH, K ; BOCKRIS, J. O.-M</creator><creatorcontrib>ITOH, K ; BOCKRIS, J. O.-M</creatorcontrib><description>For photoanodes of materials with low mobilities it is advantageous to use several layers of thickness less than the space-charge region, thereby decreasing recombination. To compensate losses due to lack of absorption, several layers should be placed successively in the light path. Some experimental verification is described.</description><identifier>ISSN: 0021-8979</identifier><identifier>EISSN: 1089-7550</identifier><identifier>DOI: 10.1063/1.334028</identifier><identifier>CODEN: JAPIAU</identifier><language>eng</language><publisher>Woodbury, NY: American Institute of Physics</publisher><subject>Applied sciences ; Energy ; Exact sciences and technology ; Natural energy ; Solar energy</subject><ispartof>Journal of applied physics, 1984-01, Vol.56 (3), p.874-876</ispartof><rights>1985 INIST-CNRS</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c351t-8dc85c59733b94c1ce53869328fcd99bfd1185448af26f31f4014938447ce5233</citedby><cites>FETCH-LOGICAL-c351t-8dc85c59733b94c1ce53869328fcd99bfd1185448af26f31f4014938447ce5233</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,776,780,27903,27904</link.rule.ids><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=9078965$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>ITOH, K</creatorcontrib><creatorcontrib>BOCKRIS, J. O.-M</creatorcontrib><title>Stacked thin-film photoelectrode using iron oxide</title><title>Journal of applied physics</title><description>For photoanodes of materials with low mobilities it is advantageous to use several layers of thickness less than the space-charge region, thereby decreasing recombination. To compensate losses due to lack of absorption, several layers should be placed successively in the light path. Some experimental verification is described.</description><subject>Applied sciences</subject><subject>Energy</subject><subject>Exact sciences and technology</subject><subject>Natural energy</subject><subject>Solar energy</subject><issn>0021-8979</issn><issn>1089-7550</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>1984</creationdate><recordtype>article</recordtype><recordid>eNo90EFLxDAQhuEgCtZV8Cf0IOKla6aTtMlRFleFBQ_qOWTTxI22zZq0oP_eShdPc3l4GT5CLoEugVZ4C0tERktxRDKgQhY15_SYZJSWUAhZy1NyltIHpQACZUbgZdDm0zb5sPN94Xzb5ftdGIJtrRliaGw-Jt-_5z6GPg_fvrHn5MTpNtmLw12Qt_X96-qx2Dw_PK3uNoVBDkMhGiO44bJG3EpmwFiOopJYCmcaKbeumT7gjAntysohOEaBSRSM1RMtERfkeu7uY_gabRpU55Oxbat7G8akSsamWCUmeDNDE0NK0Tq1j77T8UcBVX-bKFDzJhO9OjR1Mrp1UffGp38vaS1kxfEXEK1ePw</recordid><startdate>19840101</startdate><enddate>19840101</enddate><creator>ITOH, K</creator><creator>BOCKRIS, J. O.-M</creator><general>American Institute of Physics</general><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7QQ</scope><scope>8FD</scope><scope>JG9</scope></search><sort><creationdate>19840101</creationdate><title>Stacked thin-film photoelectrode using iron oxide</title><author>ITOH, K ; BOCKRIS, J. O.-M</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c351t-8dc85c59733b94c1ce53869328fcd99bfd1185448af26f31f4014938447ce5233</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>1984</creationdate><topic>Applied sciences</topic><topic>Energy</topic><topic>Exact sciences and technology</topic><topic>Natural energy</topic><topic>Solar energy</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>ITOH, K</creatorcontrib><creatorcontrib>BOCKRIS, J. O.-M</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Ceramic Abstracts</collection><collection>Technology Research Database</collection><collection>Materials Research Database</collection><jtitle>Journal of applied physics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>ITOH, K</au><au>BOCKRIS, J. O.-M</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Stacked thin-film photoelectrode using iron oxide</atitle><jtitle>Journal of applied physics</jtitle><date>1984-01-01</date><risdate>1984</risdate><volume>56</volume><issue>3</issue><spage>874</spage><epage>876</epage><pages>874-876</pages><issn>0021-8979</issn><eissn>1089-7550</eissn><coden>JAPIAU</coden><abstract>For photoanodes of materials with low mobilities it is advantageous to use several layers of thickness less than the space-charge region, thereby decreasing recombination. To compensate losses due to lack of absorption, several layers should be placed successively in the light path. Some experimental verification is described.</abstract><cop>Woodbury, NY</cop><pub>American Institute of Physics</pub><doi>10.1063/1.334028</doi><tpages>3</tpages></addata></record> |
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ispartof | Journal of applied physics, 1984-01, Vol.56 (3), p.874-876 |
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language | eng |
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subjects | Applied sciences Energy Exact sciences and technology Natural energy Solar energy |
title | Stacked thin-film photoelectrode using iron oxide |
url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-26T20%3A07%3A00IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_cross&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Stacked%20thin-film%20photoelectrode%20using%20iron%20oxide&rft.jtitle=Journal%20of%20applied%20physics&rft.au=ITOH,%20K&rft.date=1984-01-01&rft.volume=56&rft.issue=3&rft.spage=874&rft.epage=876&rft.pages=874-876&rft.issn=0021-8979&rft.eissn=1089-7550&rft.coden=JAPIAU&rft_id=info:doi/10.1063/1.334028&rft_dat=%3Cproquest_cross%3E24432868%3C/proquest_cross%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=24432868&rft_id=info:pmid/&rfr_iscdi=true |