Dislocation transmission through Σ=9 symmetrical tilt boundaries in silicon and germanium. II: Dynamic and crystallographic analysis

Dislocation transmission through a (122), Sigma = 9 boundary in Ge or Si is first studied from the crystallographic point of view. Grain-boundary structure alterations induced by transmission reactions suggested by experimental observations are investigated. The Burgers vectors of extrinsic grain-boundary dislocations and their associated steps are determined. A possible transmission process, which accounts for lattice dislocation dissociation, i.e. transmission of the leading Shockley partial without constriction, is discussed. The strain transmission is also examined using calculations of internal shear stresses exerted by dislocation pile-ups, in one crystal, at the interface, on all the second crystal's slip systems. Interpretation of the observed transmission reactions is attempted by combining the crystallographic and the dynamic criteria. 25 ref.--AA