Selective excitation luminescence and electronic Raman scattering study of the 78-meV acceptor in GaAs

We observe for the first time two excited states of the 78-meV acceptor in liquid encapsulated Czochralski GaAs with excitation energies of 62.9 and 66.9 meV above the ground state, respectively. These levels were observed in two different samples using selective excitation luminescence and electron...

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Veröffentlicht in:	Applied physics letters 1984-04, Vol.44 (8), p.793-795
Hauptverfasser:	HETZLER, S. R, MCGILL, T. C, HUNTER, A. T
Format:	Artikel
Sprache:	eng
Schlagworte:	Condensed matter: electronic structure, electrical, magnetic, and optical properties Exact sciences and technology Infrared and raman spectra and scattering Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation Physics
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