Correlation of interface composition and barrier height for model AuGeNi contacts to GaAs

Model contacts to GaAs that include nonalloyed layered structures of Au, Ge, and Ni in various combinations are used to establish a correlation between interface composition and large changes in barrier height φB. The interface Fermi level EiF and chemistry during initial contact formation were inve...

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Veröffentlicht in:	Applied physics letters 1987-02, Vol.50 (5), p.250-252
Hauptverfasser:	WALDROP, J. R, GRANT, R. W
Format:	Artikel
Sprache:	eng
Schlagworte:	Applied sciences Electronics Exact sciences and technology Interfaces Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Online-Zugang:	Volltext
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