Correlation of interface composition and barrier height for model AuGeNi contacts to GaAs
Model contacts to GaAs that include nonalloyed layered structures of Au, Ge, and Ni in various combinations are used to establish a correlation between interface composition and large changes in barrier height φB. The interface Fermi level EiF and chemistry during initial contact formation were inve...
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Veröffentlicht in: | Applied physics letters 1987-02, Vol.50 (5), p.250-252 |
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description | Model contacts to GaAs that include nonalloyed layered structures of Au, Ge, and Ni in various combinations are used to establish a correlation between interface composition and large changes in barrier height φB. The interface Fermi level EiF and chemistry during initial contact formation were investigated by x-ray photoemission spectroscopy; the corresponding φB for the thick contact was obtained by current-voltage (I-V) measurement. The circumstances under which a thin (∼10 Å) Ge layer at the GaAs interface can produce φB =∼0.25–0.4 eV (as measured by I-V) are described. For all model contacts examined a φB range from ∼0.25 to 0.9 eV is observed. This result questions the usual assumption of a relatively fixed φB of ∼0.8 eV for the alloyed AuGeNi contact and offers an alternative explanation for the mechanism of ohmic contact formation. The conditions that define the exceptionally low φB contacts provide a guide for the design of nonalloyed tunnel ohmic contacts. |
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R ; GRANT, R. W</creator><creatorcontrib>WALDROP, J. R ; GRANT, R. W</creatorcontrib><description>Model contacts to GaAs that include nonalloyed layered structures of Au, Ge, and Ni in various combinations are used to establish a correlation between interface composition and large changes in barrier height φB. The interface Fermi level EiF and chemistry during initial contact formation were investigated by x-ray photoemission spectroscopy; the corresponding φB for the thick contact was obtained by current-voltage (I-V) measurement. The circumstances under which a thin (∼10 Å) Ge layer at the GaAs interface can produce φB =∼0.25–0.4 eV (as measured by I-V) are described. For all model contacts examined a φB range from ∼0.25 to 0.9 eV is observed. This result questions the usual assumption of a relatively fixed φB of ∼0.8 eV for the alloyed AuGeNi contact and offers an alternative explanation for the mechanism of ohmic contact formation. 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W</creatorcontrib><title>Correlation of interface composition and barrier height for model AuGeNi contacts to GaAs</title><title>Applied physics letters</title><description>Model contacts to GaAs that include nonalloyed layered structures of Au, Ge, and Ni in various combinations are used to establish a correlation between interface composition and large changes in barrier height φB. The interface Fermi level EiF and chemistry during initial contact formation were investigated by x-ray photoemission spectroscopy; the corresponding φB for the thick contact was obtained by current-voltage (I-V) measurement. The circumstances under which a thin (∼10 Å) Ge layer at the GaAs interface can produce φB =∼0.25–0.4 eV (as measured by I-V) are described. For all model contacts examined a φB range from ∼0.25 to 0.9 eV is observed. This result questions the usual assumption of a relatively fixed φB of ∼0.8 eV for the alloyed AuGeNi contact and offers an alternative explanation for the mechanism of ohmic contact formation. The conditions that define the exceptionally low φB contacts provide a guide for the design of nonalloyed tunnel ohmic contacts.</description><subject>Applied sciences</subject><subject>Electronics</subject><subject>Exact sciences and technology</subject><subject>Interfaces</subject><subject>Semiconductor electronics. Microelectronics. Optoelectronics. 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R</creatorcontrib><creatorcontrib>GRANT, R. W</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Technology Research Database</collection><collection>Aerospace Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Applied physics letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>WALDROP, J. R</au><au>GRANT, R. W</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Correlation of interface composition and barrier height for model AuGeNi contacts to GaAs</atitle><jtitle>Applied physics letters</jtitle><date>1987-02-02</date><risdate>1987</risdate><volume>50</volume><issue>5</issue><spage>250</spage><epage>252</epage><pages>250-252</pages><issn>0003-6951</issn><eissn>1077-3118</eissn><coden>APPLAB</coden><abstract>Model contacts to GaAs that include nonalloyed layered structures of Au, Ge, and Ni in various combinations are used to establish a correlation between interface composition and large changes in barrier height φB. The interface Fermi level EiF and chemistry during initial contact formation were investigated by x-ray photoemission spectroscopy; the corresponding φB for the thick contact was obtained by current-voltage (I-V) measurement. The circumstances under which a thin (∼10 Å) Ge layer at the GaAs interface can produce φB =∼0.25–0.4 eV (as measured by I-V) are described. For all model contacts examined a φB range from ∼0.25 to 0.9 eV is observed. This result questions the usual assumption of a relatively fixed φB of ∼0.8 eV for the alloyed AuGeNi contact and offers an alternative explanation for the mechanism of ohmic contact formation. The conditions that define the exceptionally low φB contacts provide a guide for the design of nonalloyed tunnel ohmic contacts.</abstract><cop>Melville, NY</cop><pub>American Institute of Physics</pub><doi>10.1063/1.98215</doi><tpages>3</tpages></addata></record> |
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subjects | Applied sciences Electronics Exact sciences and technology Interfaces Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices |
title | Correlation of interface composition and barrier height for model AuGeNi contacts to GaAs |
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