Interface State Reduction by Plasma-Enhanced Atomic Layer Deposition of Homogeneous Ternary Oxides

Homogeneous ternary oxides of silicon-, niobium-, and molybdenum-aluminate were deposited by plasma-enhanced ALD using sequential metal precursor pulses prior to the oxidation step, to reduce interfacial defects usually observed in nanolaminate growth. The growth kinetics can be understood in terms...

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Veröffentlicht in:	ACS applied materials & interfaces 2020-09, Vol.12 (38), p.43250-43256
Hauptverfasser:	Vitale, Steven A, Hu, Weilin, D’Onofrio, Richard, Soares, Tony, Geis, Michael W
Format:	Artikel
Sprache:	eng
Schlagworte:	Surfaces, Interfaces, and Applications
Online-Zugang:	Volltext
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