Buried heterostructure lasers by silicon implanted, impurity induced disordering
Buried heterostructure lasers have been fabricated using impurity induced disordering from an implanted Si diffusion source. The diffused Si extends over 1 μm deep through the active region where the quantum wells are partially homogenized with the barrier and cladding layers to produce a lower refr...
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| Veröffentlicht in: | Appl. Phys. Lett.; (United States) 1987-11, Vol.51 (18), p.1401-1403 |
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| container_end_page | 1403 |
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| container_issue | 18 |
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| container_title | Appl. Phys. Lett.; (United States) |
| container_volume | 51 |
| creator | WELCH, D. F SCIFRES, D. R CROSS, P. S STREIFER, W |
| description | Buried heterostructure lasers have been fabricated using impurity induced disordering from an implanted Si diffusion source. The diffused Si extends over 1 μm deep through the active region where the quantum wells are partially homogenized with the barrier and cladding layers to produce a lower refractive index and higher band-gap material. The resulting real refractive index waveguide exhibits single longitudinal and transverse mode behavior to greater than 20 mW for a 4-μm-wide waveguide. |
| doi_str_mv | 10.1063/1.98689 |
| format | Article |
| fullrecord | <record><control><sourceid>proquest_osti_</sourceid><recordid>TN_cdi_proquest_miscellaneous_24375282</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>24375282</sourcerecordid><originalsourceid>FETCH-LOGICAL-c312t-fec870ea583d32c163dd43797c3dc778f42c3498e8eabd0ba39a1cab7978f1703</originalsourceid><addsrcrecordid>eNo9kMtOwzAQRS0EEqUgfiFCCDak-NHE9hIqXlIlWMDacsYTapQmxXYW_XtciljNjHTuzJ1LyDmjM0ZrcctmWtVKH5AJo1KWgjF1SCaUUlHWumLH5CTGrzxWXIgJebsfg0dXrDBhGGIKI6QxYNHZiCEWzbaIvvMw9IVfbzrbJ3Q3uzar0rbwvRshq52PQ3AYfP95So5a20U8-6tT8vH48L54LpevTy-Lu2UJgvFUtghKUrSVEk5wYLVwbi6kliAcSKnaOQcx1woV2sbRxgptGdgmE6plkoopudjvzaa9ieATwir77BGSqbTiWqsMXe2hTRi-R4zJrH0E7PIjOIzR8Hyy4opn8HoPQg4hBmzNJvi1DVvDqNnFapj5jTWTl38rbQTbtcH24OM_LmXN6zkTP9kgd0Q</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>24375282</pqid></control><display><type>article</type><title>Buried heterostructure lasers by silicon implanted, impurity induced disordering</title><source>AIP Digital Archive</source><creator>WELCH, D. F ; SCIFRES, D. R ; CROSS, P. S ; STREIFER, W</creator><creatorcontrib>WELCH, D. F ; SCIFRES, D. R ; CROSS, P. S ; STREIFER, W ; Spectra Diode Laboratories, 3333 North First Street, San Jose, California 95134</creatorcontrib><description>Buried heterostructure lasers have been fabricated using impurity induced disordering from an implanted Si diffusion source. The diffused Si extends over 1 μm deep through the active region where the quantum wells are partially homogenized with the barrier and cladding layers to produce a lower refractive index and higher band-gap material. The resulting real refractive index waveguide exhibits single longitudinal and transverse mode behavior to greater than 20 mW for a 4-μm-wide waveguide.</description><identifier>ISSN: 0003-6951</identifier><identifier>EISSN: 1077-3118</identifier><identifier>DOI: 10.1063/1.98689</identifier><identifier>CODEN: APPLAB</identifier><language>eng</language><publisher>Melville, NY: American Institute of Physics</publisher><subject>ARSENIC COMPOUNDS ; ARSENIDES ; ATOM TRANSPORT ; DIFFUSION ; ELEMENTS ; ENGINEERING ; Exact sciences and technology ; FABRICATION ; Fundamental areas of phenomenology (including applications) ; GALLIUM ARSENIDES ; GALLIUM COMPOUNDS ; HETEROJUNCTIONS ; IMPURITIES ; ION IMPLANTATION ; JUNCTIONS ; LASERS ; NEUTRAL-PARTICLE TRANSPORT ; OPERATION ; OPTICAL PROPERTIES ; Optics ; PHYSICAL PROPERTIES ; Physics ; PNICTIDES ; RADIATION TRANSPORT ; REFRACTIVITY ; SEMICONDUCTOR DEVICES ; SEMICONDUCTOR JUNCTIONS ; SEMICONDUCTOR LASERS ; Semiconductor lasers; laser diodes ; SEMIMETALS 420300 -- Engineering-- Lasers-- (-1989) ; SILICON ; WAVEGUIDES</subject><ispartof>Appl. Phys. Lett.; (United States), 1987-11, Vol.51 (18), p.1401-1403</ispartof><rights>1988 INIST-CNRS</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c312t-fec870ea583d32c163dd43797c3dc778f42c3498e8eabd0ba39a1cab7978f1703</citedby><cites>FETCH-LOGICAL-c312t-fec870ea583d32c163dd43797c3dc778f42c3498e8eabd0ba39a1cab7978f1703</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,780,784,885,27924,27925</link.rule.ids><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=7762641$$DView record in Pascal Francis$$Hfree_for_read</backlink><backlink>$$Uhttps://www.osti.gov/biblio/5982998$$D View this record in Osti.gov$$Hfree_for_read</backlink></links><search><creatorcontrib>WELCH, D. F</creatorcontrib><creatorcontrib>SCIFRES, D. R</creatorcontrib><creatorcontrib>CROSS, P. S</creatorcontrib><creatorcontrib>STREIFER, W</creatorcontrib><creatorcontrib>Spectra Diode Laboratories, 3333 North First Street, San Jose, California 95134</creatorcontrib><title>Buried heterostructure lasers by silicon implanted, impurity induced disordering</title><title>Appl. Phys. Lett.; (United States)</title><description>Buried heterostructure lasers have been fabricated using impurity induced disordering from an implanted Si diffusion source. The diffused Si extends over 1 μm deep through the active region where the quantum wells are partially homogenized with the barrier and cladding layers to produce a lower refractive index and higher band-gap material. The resulting real refractive index waveguide exhibits single longitudinal and transverse mode behavior to greater than 20 mW for a 4-μm-wide waveguide.</description><subject>ARSENIC COMPOUNDS</subject><subject>ARSENIDES</subject><subject>ATOM TRANSPORT</subject><subject>DIFFUSION</subject><subject>ELEMENTS</subject><subject>ENGINEERING</subject><subject>Exact sciences and technology</subject><subject>FABRICATION</subject><subject>Fundamental areas of phenomenology (including applications)</subject><subject>GALLIUM ARSENIDES</subject><subject>GALLIUM COMPOUNDS</subject><subject>HETEROJUNCTIONS</subject><subject>IMPURITIES</subject><subject>ION IMPLANTATION</subject><subject>JUNCTIONS</subject><subject>LASERS</subject><subject>NEUTRAL-PARTICLE TRANSPORT</subject><subject>OPERATION</subject><subject>OPTICAL PROPERTIES</subject><subject>Optics</subject><subject>PHYSICAL PROPERTIES</subject><subject>Physics</subject><subject>PNICTIDES</subject><subject>RADIATION TRANSPORT</subject><subject>REFRACTIVITY</subject><subject>SEMICONDUCTOR DEVICES</subject><subject>SEMICONDUCTOR JUNCTIONS</subject><subject>SEMICONDUCTOR LASERS</subject><subject>Semiconductor lasers; laser diodes</subject><subject>SEMIMETALS 420300 -- Engineering-- Lasers-- (-1989)</subject><subject>SILICON</subject><subject>WAVEGUIDES</subject><issn>0003-6951</issn><issn>1077-3118</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>1987</creationdate><recordtype>article</recordtype><recordid>eNo9kMtOwzAQRS0EEqUgfiFCCDak-NHE9hIqXlIlWMDacsYTapQmxXYW_XtciljNjHTuzJ1LyDmjM0ZrcctmWtVKH5AJo1KWgjF1SCaUUlHWumLH5CTGrzxWXIgJebsfg0dXrDBhGGIKI6QxYNHZiCEWzbaIvvMw9IVfbzrbJ3Q3uzar0rbwvRshq52PQ3AYfP95So5a20U8-6tT8vH48L54LpevTy-Lu2UJgvFUtghKUrSVEk5wYLVwbi6kliAcSKnaOQcx1woV2sbRxgptGdgmE6plkoopudjvzaa9ieATwir77BGSqbTiWqsMXe2hTRi-R4zJrH0E7PIjOIzR8Hyy4opn8HoPQg4hBmzNJvi1DVvDqNnFapj5jTWTl38rbQTbtcH24OM_LmXN6zkTP9kgd0Q</recordid><startdate>19871102</startdate><enddate>19871102</enddate><creator>WELCH, D. F</creator><creator>SCIFRES, D. R</creator><creator>CROSS, P. S</creator><creator>STREIFER, W</creator><general>American Institute of Physics</general><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>8FD</scope><scope>H8D</scope><scope>L7M</scope><scope>OTOTI</scope></search><sort><creationdate>19871102</creationdate><title>Buried heterostructure lasers by silicon implanted, impurity induced disordering</title><author>WELCH, D. F ; SCIFRES, D. R ; CROSS, P. S ; STREIFER, W</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c312t-fec870ea583d32c163dd43797c3dc778f42c3498e8eabd0ba39a1cab7978f1703</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>1987</creationdate><topic>ARSENIC COMPOUNDS</topic><topic>ARSENIDES</topic><topic>ATOM TRANSPORT</topic><topic>DIFFUSION</topic><topic>ELEMENTS</topic><topic>ENGINEERING</topic><topic>Exact sciences and technology</topic><topic>FABRICATION</topic><topic>Fundamental areas of phenomenology (including applications)</topic><topic>GALLIUM ARSENIDES</topic><topic>GALLIUM COMPOUNDS</topic><topic>HETEROJUNCTIONS</topic><topic>IMPURITIES</topic><topic>ION IMPLANTATION</topic><topic>JUNCTIONS</topic><topic>LASERS</topic><topic>NEUTRAL-PARTICLE TRANSPORT</topic><topic>OPERATION</topic><topic>OPTICAL PROPERTIES</topic><topic>Optics</topic><topic>PHYSICAL PROPERTIES</topic><topic>Physics</topic><topic>PNICTIDES</topic><topic>RADIATION TRANSPORT</topic><topic>REFRACTIVITY</topic><topic>SEMICONDUCTOR DEVICES</topic><topic>SEMICONDUCTOR JUNCTIONS</topic><topic>SEMICONDUCTOR LASERS</topic><topic>Semiconductor lasers; laser diodes</topic><topic>SEMIMETALS 420300 -- Engineering-- Lasers-- (-1989)</topic><topic>SILICON</topic><topic>WAVEGUIDES</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>WELCH, D. F</creatorcontrib><creatorcontrib>SCIFRES, D. R</creatorcontrib><creatorcontrib>CROSS, P. S</creatorcontrib><creatorcontrib>STREIFER, W</creatorcontrib><creatorcontrib>Spectra Diode Laboratories, 3333 North First Street, San Jose, California 95134</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Technology Research Database</collection><collection>Aerospace Database</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>OSTI.GOV</collection><jtitle>Appl. Phys. Lett.; (United States)</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>WELCH, D. F</au><au>SCIFRES, D. R</au><au>CROSS, P. S</au><au>STREIFER, W</au><aucorp>Spectra Diode Laboratories, 3333 North First Street, San Jose, California 95134</aucorp><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Buried heterostructure lasers by silicon implanted, impurity induced disordering</atitle><jtitle>Appl. Phys. Lett.; (United States)</jtitle><date>1987-11-02</date><risdate>1987</risdate><volume>51</volume><issue>18</issue><spage>1401</spage><epage>1403</epage><pages>1401-1403</pages><issn>0003-6951</issn><eissn>1077-3118</eissn><coden>APPLAB</coden><abstract>Buried heterostructure lasers have been fabricated using impurity induced disordering from an implanted Si diffusion source. The diffused Si extends over 1 μm deep through the active region where the quantum wells are partially homogenized with the barrier and cladding layers to produce a lower refractive index and higher band-gap material. The resulting real refractive index waveguide exhibits single longitudinal and transverse mode behavior to greater than 20 mW for a 4-μm-wide waveguide.</abstract><cop>Melville, NY</cop><pub>American Institute of Physics</pub><doi>10.1063/1.98689</doi><tpages>3</tpages></addata></record> |
| fulltext | fulltext |
| identifier | ISSN: 0003-6951 |
| ispartof | Appl. Phys. Lett.; (United States), 1987-11, Vol.51 (18), p.1401-1403 |
| issn | 0003-6951 1077-3118 |
| language | eng |
| recordid | cdi_proquest_miscellaneous_24375282 |
| source | AIP Digital Archive |
| subjects | ARSENIC COMPOUNDS ARSENIDES ATOM TRANSPORT DIFFUSION ELEMENTS ENGINEERING Exact sciences and technology FABRICATION Fundamental areas of phenomenology (including applications) GALLIUM ARSENIDES GALLIUM COMPOUNDS HETEROJUNCTIONS IMPURITIES ION IMPLANTATION JUNCTIONS LASERS NEUTRAL-PARTICLE TRANSPORT OPERATION OPTICAL PROPERTIES Optics PHYSICAL PROPERTIES Physics PNICTIDES RADIATION TRANSPORT REFRACTIVITY SEMICONDUCTOR DEVICES SEMICONDUCTOR JUNCTIONS SEMICONDUCTOR LASERS Semiconductor lasers laser diodes SEMIMETALS 420300 -- Engineering-- Lasers-- (-1989) SILICON WAVEGUIDES |
| title | Buried heterostructure lasers by silicon implanted, impurity induced disordering |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-12-24T04%3A21%3A44IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_osti_&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Buried%20heterostructure%20lasers%20by%20silicon%20implanted,%20impurity%20induced%20disordering&rft.jtitle=Appl.%20Phys.%20Lett.;%20(United%20States)&rft.au=WELCH,%20D.%20F&rft.aucorp=Spectra%20Diode%20Laboratories,%203333%20North%20First%20Street,%20San%20Jose,%20California%2095134&rft.date=1987-11-02&rft.volume=51&rft.issue=18&rft.spage=1401&rft.epage=1403&rft.pages=1401-1403&rft.issn=0003-6951&rft.eissn=1077-3118&rft.coden=APPLAB&rft_id=info:doi/10.1063/1.98689&rft_dat=%3Cproquest_osti_%3E24375282%3C/proquest_osti_%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=24375282&rft_id=info:pmid/&rfr_iscdi=true |