A chemical reaction model for physical vapor deposition of compound semiconductor films
A model for the physical vapor deposition of compound semiconductor films that describes film growth from component molecular beams is presented. Constitutive relationships are used in the model to account for incomplete adsorption from the incident molecular beams, emission of adsorbed components i...
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| Veröffentlicht in: | AIChE journal 1987-05, Vol.33 (5), p.711-721 |
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| container_end_page | 721 |
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| container_issue | 5 |
| container_start_page | 711 |
| container_title | AIChE journal |
| container_volume | 33 |
| creator | Jackson, S. C. Baron, B. N. Rocheleau, R. E. Russell, T. W. F. |
| description | A model for the physical vapor deposition of compound semiconductor films that describes film growth from component molecular beams is presented. Constitutive relationships are used in the model to account for incomplete adsorption from the incident molecular beams, emission of adsorbed components into vacuum, and surface reactions of the elemental species. The model predicts film composition and growth rate as a function of incident fluxes and substrate temperature. It is applicable for important binary and ternary alloy semiconductors including the II‐VI and III‐V compounds over the range of deposition conditions yielding both stoichiometric and two‐phase films. In this paper the model equations and the behavior predicted by the model are described for a number of material systems including (CdHg)Te, (CdZn)S, and CuInSe2. |
| doi_str_mv | 10.1002/aic.690330503 |
| format | Article |
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C. ; Baron, B. N. ; Rocheleau, R. E. ; Russell, T. W. F.</creator><creatorcontrib>Jackson, S. C. ; Baron, B. N. ; Rocheleau, R. E. ; Russell, T. W. F.</creatorcontrib><description>A model for the physical vapor deposition of compound semiconductor films that describes film growth from component molecular beams is presented. Constitutive relationships are used in the model to account for incomplete adsorption from the incident molecular beams, emission of adsorbed components into vacuum, and surface reactions of the elemental species. The model predicts film composition and growth rate as a function of incident fluxes and substrate temperature. It is applicable for important binary and ternary alloy semiconductors including the II‐VI and III‐V compounds over the range of deposition conditions yielding both stoichiometric and two‐phase films. In this paper the model equations and the behavior predicted by the model are described for a number of material systems including (CdHg)Te, (CdZn)S, and CuInSe2.</description><identifier>ISSN: 0001-1541</identifier><identifier>EISSN: 1547-5905</identifier><identifier>DOI: 10.1002/aic.690330503</identifier><identifier>CODEN: AICEAC</identifier><language>eng</language><publisher>New York: American Institute of Chemical Engineers</publisher><subject>Condensed matter: structure, mechanical and thermal properties ; Exact sciences and technology ; Physics ; Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties) ; Thin film structure and morphology</subject><ispartof>AIChE journal, 1987-05, Vol.33 (5), p.711-721</ispartof><rights>Copyright © 1987 American Institute of Chemical Engineers</rights><rights>1988 INIST-CNRS</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c4173-4eda8dbfacf0073c86751c279735d447786441cc23e540ea9f2cf752ca093db43</citedby><cites>FETCH-LOGICAL-c4173-4eda8dbfacf0073c86751c279735d447786441cc23e540ea9f2cf752ca093db43</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://onlinelibrary.wiley.com/doi/pdf/10.1002%2Faic.690330503$$EPDF$$P50$$Gwiley$$H</linktopdf><linktohtml>$$Uhttps://onlinelibrary.wiley.com/doi/full/10.1002%2Faic.690330503$$EHTML$$P50$$Gwiley$$H</linktohtml><link.rule.ids>314,776,780,1411,27903,27904,45553,45554</link.rule.ids><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=7485281$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>Jackson, S. 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It is applicable for important binary and ternary alloy semiconductors including the II‐VI and III‐V compounds over the range of deposition conditions yielding both stoichiometric and two‐phase films. In this paper the model equations and the behavior predicted by the model are described for a number of material systems including (CdHg)Te, (CdZn)S, and CuInSe2.</description><subject>Condensed matter: structure, mechanical and thermal properties</subject><subject>Exact sciences and technology</subject><subject>Physics</subject><subject>Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties)</subject><subject>Thin film structure and morphology</subject><issn>0001-1541</issn><issn>1547-5905</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>1987</creationdate><recordtype>article</recordtype><recordid>eNp9kL1PwzAQxS0EEqUwsmdAbCn-rJOxFCigAgsINstcbGFI4mC3QP973A9VTEynu_vde6eH0DHBA4IxPdMOBsMSM4YFZjuoRwSXuSix2EU9jDHJ04Dso4MY31NHZUF76HmUwZtpHOg6C0bDzPk2a3xl6sz6kHVvi7jafekutZXpfHQrxtsMfNP5eVtlcSng22oOswRZVzfxEO1ZXUdztKl99HR1-Ti-zqcPk5vxaJoDJ5Ll3FS6qF6tBouxZFAMpSBAZSmZqDiXshhyTgAoM4Jjo0tLwUpBQeOSVa-c9dHpWrcL_nNu4kw1LoKpa90aP4-KciZ5maz6KF-DEHyMwVjVBdfosFAEq2V8KsWntvEl_mQjrGMKwAbdgovbI8kLQQuSMLnGvl1tFv9rqtHN-K_B5iEXZ-Zne6nDhxpKJoV6vp-ol8n5BZ7e3apr9gvc-Y-o</recordid><startdate>198705</startdate><enddate>198705</enddate><creator>Jackson, S. 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F.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>A chemical reaction model for physical vapor deposition of compound semiconductor films</atitle><jtitle>AIChE journal</jtitle><addtitle>AIChE J</addtitle><date>1987-05</date><risdate>1987</risdate><volume>33</volume><issue>5</issue><spage>711</spage><epage>721</epage><pages>711-721</pages><issn>0001-1541</issn><eissn>1547-5905</eissn><coden>AICEAC</coden><abstract>A model for the physical vapor deposition of compound semiconductor films that describes film growth from component molecular beams is presented. Constitutive relationships are used in the model to account for incomplete adsorption from the incident molecular beams, emission of adsorbed components into vacuum, and surface reactions of the elemental species. The model predicts film composition and growth rate as a function of incident fluxes and substrate temperature. It is applicable for important binary and ternary alloy semiconductors including the II‐VI and III‐V compounds over the range of deposition conditions yielding both stoichiometric and two‐phase films. In this paper the model equations and the behavior predicted by the model are described for a number of material systems including (CdHg)Te, (CdZn)S, and CuInSe2.</abstract><cop>New York</cop><pub>American Institute of Chemical Engineers</pub><doi>10.1002/aic.690330503</doi><tpages>11</tpages></addata></record> |
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| ispartof | AIChE journal, 1987-05, Vol.33 (5), p.711-721 |
| issn | 0001-1541 1547-5905 |
| language | eng |
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| source | Wiley Online Library Journals Frontfile Complete |
| subjects | Condensed matter: structure, mechanical and thermal properties Exact sciences and technology Physics Surfaces and interfaces thin films and whiskers (structure and nonelectronic properties) Thin film structure and morphology |
| title | A chemical reaction model for physical vapor deposition of compound semiconductor films |
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