Variably spaced superlattice energy filter, a new device design concept for high-energy electron injection
A new variably spaced superlattice energy filter is proposed which provides high-energy injection of electrons into a bulk semiconductor layer based on resonant tunneling between adjacent quantum well levels which are brought into alignment by an applied bias. Applications of this concept to a varie...
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Veröffentlicht in: | Applied physics letters 1986-03, Vol.48 (12), p.806-808 |
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container_title | Applied physics letters |
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creator | Summers, C. J. Brennan, K. F. |
description | A new variably spaced superlattice energy filter is proposed which provides high-energy injection of electrons into a bulk semiconductor layer based on resonant tunneling between adjacent quantum well levels which are brought into alignment by an applied bias. Applications of this concept to a variety of optoelectronic devices and to thin-film electroluminescent devices and photodetectors are discussed. |
doi_str_mv | 10.1063/1.96676 |
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J. ; Brennan, K. F.</creator><creatorcontrib>Summers, C. J. ; Brennan, K. F.</creatorcontrib><description>A new variably spaced superlattice energy filter is proposed which provides high-energy injection of electrons into a bulk semiconductor layer based on resonant tunneling between adjacent quantum well levels which are brought into alignment by an applied bias. Applications of this concept to a variety of optoelectronic devices and to thin-film electroluminescent devices and photodetectors are discussed.</description><identifier>ISSN: 0003-6951</identifier><identifier>EISSN: 1077-3118</identifier><identifier>DOI: 10.1063/1.96676</identifier><identifier>CODEN: APPLAB</identifier><language>eng</language><publisher>Legacy CDMS: American Institute of Physics</publisher><subject>Applied sciences ; Charge transfer devices ; Electronics ; Electronics And Electrical Engineering ; Exact sciences and technology ; Semiconductor electronics. Microelectronics. Optoelectronics. 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F.</creatorcontrib><title>Variably spaced superlattice energy filter, a new device design concept for high-energy electron injection</title><title>Applied physics letters</title><description>A new variably spaced superlattice energy filter is proposed which provides high-energy injection of electrons into a bulk semiconductor layer based on resonant tunneling between adjacent quantum well levels which are brought into alignment by an applied bias. Applications of this concept to a variety of optoelectronic devices and to thin-film electroluminescent devices and photodetectors are discussed.</description><subject>Applied sciences</subject><subject>Charge transfer devices</subject><subject>Electronics</subject><subject>Electronics And Electrical Engineering</subject><subject>Exact sciences and technology</subject><subject>Semiconductor electronics. Microelectronics. Optoelectronics. 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F.</creator><general>American Institute of Physics</general><scope>CYE</scope><scope>CYI</scope><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>8FD</scope><scope>H8D</scope><scope>L7M</scope></search><sort><creationdate>19860324</creationdate><title>Variably spaced superlattice energy filter, a new device design concept for high-energy electron injection</title><author>Summers, C. J. ; Brennan, K. F.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c370t-cd856bbb94efffaf65509ef22e1c0b785f3eb4f067db2a674f65caea3c7149803</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>1986</creationdate><topic>Applied sciences</topic><topic>Charge transfer devices</topic><topic>Electronics</topic><topic>Electronics And Electrical Engineering</topic><topic>Exact sciences and technology</topic><topic>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Summers, C. J.</creatorcontrib><creatorcontrib>Brennan, K. F.</creatorcontrib><collection>NASA Scientific and Technical Information</collection><collection>NASA Technical Reports Server</collection><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Technology Research Database</collection><collection>Aerospace Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Applied physics letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Summers, C. J.</au><au>Brennan, K. F.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Variably spaced superlattice energy filter, a new device design concept for high-energy electron injection</atitle><jtitle>Applied physics letters</jtitle><date>1986-03-24</date><risdate>1986</risdate><volume>48</volume><issue>12</issue><spage>806</spage><epage>808</epage><pages>806-808</pages><issn>0003-6951</issn><eissn>1077-3118</eissn><coden>APPLAB</coden><abstract>A new variably spaced superlattice energy filter is proposed which provides high-energy injection of electrons into a bulk semiconductor layer based on resonant tunneling between adjacent quantum well levels which are brought into alignment by an applied bias. Applications of this concept to a variety of optoelectronic devices and to thin-film electroluminescent devices and photodetectors are discussed.</abstract><cop>Legacy CDMS</cop><pub>American Institute of Physics</pub><doi>10.1063/1.96676</doi><tpages>3</tpages></addata></record> |
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ispartof | Applied physics letters, 1986-03, Vol.48 (12), p.806-808 |
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source | AIP Digital Archive; NASA Technical Reports Server |
subjects | Applied sciences Charge transfer devices Electronics Electronics And Electrical Engineering Exact sciences and technology Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices |
title | Variably spaced superlattice energy filter, a new device design concept for high-energy electron injection |
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