Up conversion of luminescence via deep centers in high purity GaAs and GaAlAs epitaxial layers

Up-converted band to band luminescence generated by photons with energy lower than the band gap has been observed in high purity GaAs and GaAlAs epitaxial layers as well as in undoped melt-grown GaAs. This is explained by assuming a two-step excitation process involving a deep center as intermediate...

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Veröffentlicht in:	Applied physics letters 1984-09, Vol.45 (5), p.555-557
Hauptverfasser:	QUAGLIANO, L. G, NATHER, H
Format:	Artikel
Sprache:	eng
Schlagworte:	Condensed matter: electronic structure, electrical, magnetic, and optical properties Exact sciences and technology Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation Photoluminescence Physics
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