Theoretical discussion of the scanning tunneling microscope applied to a semiconductor surface

A free-electron model that we recently developed for a metal-metal microscope is extended to the case of a semiconducting sample. The probe, biased positive with respect to the sample, is taken to be a free-electron metal in the shape of a plane with a hemispherical projection. The sample, its surfa...

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Veröffentlicht in:	Surface science 1986-09, Vol.175 (2), p.415-420
Hauptverfasser:	Bono, J., Good, R.H.
Format:	Artikel
Sprache:	eng
Schlagworte:	Condensed matter: structure, mechanical and thermal properties Exact sciences and technology Physics Solid surfaces and solid-solid interfaces Surface structure and topography Surfaces and interfaces thin films and whiskers (structure and nonelectronic properties)
Online-Zugang:	Volltext
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