Monolayer surface doping of GaAs from a plated zinc source
We have investigated surface doping and diffusion of Zn in GaAs using rapid thermal processing. The use of an aqueous RuCl3 pretreatment has enabled us to electroplate uniform ≊100-Å-thick Zn layers directly on the GaAs surface. The excess Zn is removed with a 500 °C vacuum ‘‘evaporation,’’ leaving...
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| Veröffentlicht in: | Applied physics letters 1984-01, Vol.44 (9), p.884-886 |
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| container_end_page | 886 |
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| container_issue | 9 |
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| container_title | Applied physics letters |
| container_volume | 44 |
| creator | DOPKIN, D. M GIBBONS, J. F |
| description | We have investigated surface doping and diffusion of Zn in GaAs using rapid thermal processing. The use of an aqueous RuCl3 pretreatment has enabled us to electroplate uniform ≊100-Å-thick Zn layers directly on the GaAs surface. The excess Zn is removed with a 500 °C vacuum ‘‘evaporation,’’ leaving a modified surface layer which may serve as a dopant source for rapid thermal diffusion. Evaporation of A1 onto such surfaces yields Schottky diodes with enhanced barrier heights which have been used to fabricate metal-semiconductor field-effect transistor structures. |
| doi_str_mv | 10.1063/1.94940 |
| format | Article |
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The use of an aqueous RuCl3 pretreatment has enabled us to electroplate uniform ≊100-Å-thick Zn layers directly on the GaAs surface. The excess Zn is removed with a 500 °C vacuum ‘‘evaporation,’’ leaving a modified surface layer which may serve as a dopant source for rapid thermal diffusion. Evaporation of A1 onto such surfaces yields Schottky diodes with enhanced barrier heights which have been used to fabricate metal-semiconductor field-effect transistor structures.</abstract><cop>Melville, NY</cop><pub>American Institute of Physics</pub><doi>10.1063/1.94940</doi><tpages>3</tpages></addata></record> |
| fulltext | fulltext |
| identifier | ISSN: 0003-6951 |
| ispartof | Applied physics letters, 1984-01, Vol.44 (9), p.884-886 |
| issn | 0003-6951 1077-3118 |
| language | eng |
| recordid | cdi_proquest_miscellaneous_24272097 |
| source | AIP Digital Archive |
| subjects | Condensed matter: structure, mechanical and thermal properties Defects and impurities in crystals microstructure Doping and impurity implantation in iii-v and ii-vi semiconductors Exact sciences and technology Physics Structure of solids and liquids crystallography |
| title | Monolayer surface doping of GaAs from a plated zinc source |
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