Electroluminescence studies in silicon dioxide films containing tiny silicon islands

Electroluminescence from metal-insulator-semiconductor structures with silicon dioxide (SiO2) layers containing varying amounts of excess silicon (Si) in the form of tiny Si precipitates have been studied in detail. Bulk insulator emission from the Si islands is shown to dominate over emission from...

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Veröffentlicht in:	Journal of applied physics 1984-01, Vol.56 (2), p.401-416
Hauptverfasser:	DIMARIA, D. J, KIRTLEY, J. R, PAKULIS, E. J, DONG, D. W, KUAN, T. S, PESAVENTO, F. L, THEIS, T. N, CUTRO, J. A, BRORSON, S. D
Format:	Artikel
Sprache:	eng
Schlagworte:	Applied sciences Electronics Exact sciences and technology Interfaces Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Online-Zugang:	Volltext
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