Selective dry etching of tungsten for VLSI metallization

Recently, refractory metals such as tungsten have attracted considerable attention as materials suitable for high density, high speed VLSI interconnect structures. Producing submicron W structures requires an etching process with high anisotropy and selectivity, such as can be achieved in RF glow di...

Ausführliche Beschreibung

Bibliographische Detailangaben

Veröffentlicht in:	Journal of the Electrochemical Society 1986-10, Vol.133 (10), p.2113-2118
Hauptverfasser:	BURBA, M. E, DEGENKOLB, E, HENCK, S, TABASKY, M, JUNGBLUTH, E. D, WILSON, R
Format:	Artikel
Sprache:	eng
Schlagworte:	Applied sciences Cross-disciplinary physics: materials science rheology Exact sciences and technology Materials science Metals, semimetals and alloys Metals. Metallurgy Other surface treatments Physics Production techniques Specific materials Surface treatment
Online-Zugang:	Volltext
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!