Electronic profile of a GaAs solar cell through photoluminescence

A p-n junction diode is modeled as three spatial regions: n type, depletion, and p type, each of which is distinguished by its own photoluminescence signature. Variation in bias alters the spatial boundaries of these three regions; variation in excitation wavelength changes the depth which is probed...

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Veröffentlicht in:	J. Appl. Phys.; (United States) 1984-12, Vol.56 (12), p.3451-3456
Hauptverfasser:	HOLLINGSWORTH, R. E, SITES, J. R
Format:	Artikel
Sprache:	eng
Schlagworte:	140501 - Solar Energy Conversion- Photovoltaic Conversion Applied sciences DIRECT ENERGY CONVERTERS ELECTRIC POTENTIAL ELECTROLUMINESCENCE Energy ENERGY-LEVEL TRANSITIONS Exact sciences and technology EXCITATION GALLIUM ARSENIDE SOLAR CELLS JUNCTIONS LUMINESCENCE Natural energy P-N JUNCTIONS PHOTOELECTRIC CELLS PHOTOELECTROMAGNETIC EFFECTS PHOTOLUMINESCENCE PHOTOVOLTAIC CELLS PHOTOVOLTAIC EFFECT SEMICONDUCTOR DEVICES SEMICONDUCTOR DIODES SEMICONDUCTOR JUNCTIONS SOLAR CELLS SOLAR ENERGY SOLAR EQUIPMENT
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