Photoenhanced electrochemical etching for p -GaN

Photoenhanced electrochemical etching for p -GaN

An effective wet chemical etching method for p-GaN is proposed based on the surface band bending of the semiconductor. The metal organic chemical vapour deposition (MOCVD) grown p-GaN was successfully etched by biasing the substrate below -3 V during photoenhanced electrochemical etching using KOH s...

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Veröffentlicht in:Electronics letters 2000-01, Vol.36 (1), p.88-90
Hauptverfasser: Yang, Jeon-Wook, Kim, Byung-Mok, Yoon, Chang-Joo, Yang, Gye-Mo, Lee, Hyung-Jae
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container_issue 1
container_start_page 88
container_title Electronics letters
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creator Yang, Jeon-Wook
Kim, Byung-Mok
Yoon, Chang-Joo
Yang, Gye-Mo
Lee, Hyung-Jae
description An effective wet chemical etching method for p-GaN is proposed based on the surface band bending of the semiconductor. The metal organic chemical vapour deposition (MOCVD) grown p-GaN was successfully etched by biasing the substrate below -3 V during photoenhanced electrochemical etching using KOH solution and Hg lamp illumination. The etch rate increased with increasing negative voltage and was as high as 2.1 mu m/min at -10 V.
doi_str_mv 10.1049/el:20000036
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title Photoenhanced electrochemical etching for p -GaN
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