Properties of PbTe and Pb(1-x)Sn(x)Te films prepared by metalorganic chemical vapor deposition
A development status evaluation is conducted for MOCVD and other related growth procedures, and to the electrical properties they impart to films of PbTe and Pb(1-x)Sn(x)Te, with attention to films of x = 0.2 that were grown on single crystal substrates of BaF2 and PbTe. The reactants in question we...
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| Veröffentlicht in: | Journal of crystal growth 1986-09, Vol.77, p.468-474 |
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| Hauptverfasser: | , , |
| Format: | Artikel |
| Sprache: | eng |
| Online-Zugang: | Volltext |
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