Properties of PbTe and Pb(1-x)Sn(x)Te films prepared by metalorganic chemical vapor deposition

Properties of PbTe and Pb(1-x)Sn(x)Te films prepared by metalorganic chemical vapor deposition

A development status evaluation is conducted for MOCVD and other related growth procedures, and to the electrical properties they impart to films of PbTe and Pb(1-x)Sn(x)Te, with attention to films of x = 0.2 that were grown on single crystal substrates of BaF2 and PbTe. The reactants in question we...

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Veröffentlicht in:Journal of crystal growth 1986-09, Vol.77, p.468-474
Hauptverfasser: Manasevit, H M, Ruth, R P, Simpson, W I
Format: Artikel
Sprache:eng
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Zusammenfassung:A development status evaluation is conducted for MOCVD and other related growth procedures, and to the electrical properties they impart to films of PbTe and Pb(1-x)Sn(x)Te, with attention to films of x = 0.2 that were grown on single crystal substrates of BaF2 and PbTe. The reactants in question were TEPb and TMPb, TESn, TMSn, and DMTe. Results are given for carrier concentrations obtained with different dopings. (O.C.)
ISSN:0022-0248