Investigating the origins of ultra-short relaxation times of silver filaments in forming-free SiO2-based conductive bridge memristors

The threshold switching effect is considered of outmost importance for a variety of applications ranging from the reliable operation of crossbar architectures to emulating neuromorphic properties with artificial neural networks. This property is strongly believed to be associated with the rich inher...

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Veröffentlicht in:	Nanotechnology 2020-11, Vol.31 (45), p.454002-454002
Hauptverfasser:	Bousoulas, Panagiotis, Sakellaropoulos, Dionisis, Papakonstantinopoulos, Charalampos, Kitsios, Stavros, Arvanitis, Chris, Bagakis, Emmanouil, Tsoukalas, Dimitris
Format:	Artikel
Sprache:	eng
Schlagworte:	conducting filament Joule heating memristor numerical simulations Soret diffusion threshold switching
Online-Zugang:	Volltext
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