Interactions Between Epitaxial Graphene Grown on the Si- and C-Faces of 4H-SiC Investigated Using Raman Imaging and Tip-Enhanced Raman Scattering

Interactions between epitaxial graphene grown on Si- and C-faces were investigated using Raman imaging and tip-enhanced Raman scattering (TERS). In the TERS spectrum, which has a spatial resolution exceeding the diffraction limit, a D band was observed not from graphene surface, but from the edges o...

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Veröffentlicht in:	Applied spectroscopy 2020-11, Vol.74 (11), p.1384-1390
Hauptverfasser:	Uemura, Shohei, Vantasin, Sanpon, Kitahama, Yasutaka, Tanaka, Yoshito Yannick, Suzuki, Toshiaki, Doujima, Daichi, Kaneko, Tadaaki, Ozaki, Yukihiro
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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