Photosensitivity and spectra of deep local states in sintered films of cadmium selenide and cadmium telluride alloys
The photoconductive and luminescence properties of non-intentionally doped and copper-doped CdSe x Te 1− x ( x=0−1) films were studied. The films were prepared by spraying an aqueous suspension of mixtures with varying composition onto ceramic substrate. Both the energy gaps determined using photoco...
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| Veröffentlicht in: | Thin solid films 1986-10, Vol.143 (3), p.225-235 |
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| creator | Ermolovich, I.B. Pavelets, A.M. Khanat, L.N. |
| description | The photoconductive and luminescence properties of non-intentionally doped and copper-doped
CdSe
x
Te
1−
x
(
x=0−1) films were studied. The films were prepared by spraying an aqueous suspension of mixtures with varying composition onto ceramic substrate. Both the energy gaps determined using photoconductivity spectra and the maxima of the luminescence bands as functions of the film composition
x were obtained. The correlation of the luminescence intensity and the photoconductivity with
x was established. Using the decay curves of photocurrent excited under “light impact” conditions the electron capture cross-sections of the recombination centres in the films under investigation were estimated. The nature of the recombination centres in CdSe
x
Te
1−
x
(
x=0–1) films both copper free and copper doped are discussed. |
| doi_str_mv | 10.1016/0040-6090(86)90176-8 |
| format | Article |
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CdSe
x
Te
1−
x
(
x=0−1) films were studied. The films were prepared by spraying an aqueous suspension of mixtures with varying composition onto ceramic substrate. Both the energy gaps determined using photoconductivity spectra and the maxima of the luminescence bands as functions of the film composition
x were obtained. The correlation of the luminescence intensity and the photoconductivity with
x was established. Using the decay curves of photocurrent excited under “light impact” conditions the electron capture cross-sections of the recombination centres in the films under investigation were estimated. The nature of the recombination centres in CdSe
x
Te
1−
x
(
x=0–1) films both copper free and copper doped are discussed.</description><identifier>ISSN: 0040-6090</identifier><identifier>EISSN: 1879-2731</identifier><identifier>DOI: 10.1016/0040-6090(86)90176-8</identifier><identifier>CODEN: THSFAP</identifier><language>eng</language><publisher>Lausanne: Elsevier B.V</publisher><subject>Condensed matter: electronic structure, electrical, magnetic, and optical properties ; Electronic transport in condensed matter ; Exact sciences and technology ; Photoconduction and photovoltaic effects; photodielectric effects ; Physics</subject><ispartof>Thin solid films, 1986-10, Vol.143 (3), p.225-235</ispartof><rights>1986</rights><rights>1987 INIST-CNRS</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c364t-3f1b933b7038ccadae960c51486aca908c40182a5e553150db09233a0e09a4063</citedby><cites>FETCH-LOGICAL-c364t-3f1b933b7038ccadae960c51486aca908c40182a5e553150db09233a0e09a4063</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://dx.doi.org/10.1016/0040-6090(86)90176-8$$EHTML$$P50$$Gelsevier$$H</linktohtml><link.rule.ids>314,780,784,3550,27924,27925,45995</link.rule.ids><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=8260602$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>Ermolovich, I.B.</creatorcontrib><creatorcontrib>Pavelets, A.M.</creatorcontrib><creatorcontrib>Khanat, L.N.</creatorcontrib><title>Photosensitivity and spectra of deep local states in sintered films of cadmium selenide and cadmium telluride alloys</title><title>Thin solid films</title><description>The photoconductive and luminescence properties of non-intentionally doped and copper-doped
CdSe
x
Te
1−
x
(
x=0−1) films were studied. The films were prepared by spraying an aqueous suspension of mixtures with varying composition onto ceramic substrate. Both the energy gaps determined using photoconductivity spectra and the maxima of the luminescence bands as functions of the film composition
x were obtained. The correlation of the luminescence intensity and the photoconductivity with
x was established. Using the decay curves of photocurrent excited under “light impact” conditions the electron capture cross-sections of the recombination centres in the films under investigation were estimated. The nature of the recombination centres in CdSe
x
Te
1−
x
(
x=0–1) films both copper free and copper doped are discussed.</description><subject>Condensed matter: electronic structure, electrical, magnetic, and optical properties</subject><subject>Electronic transport in condensed matter</subject><subject>Exact sciences and technology</subject><subject>Photoconduction and photovoltaic effects; photodielectric effects</subject><subject>Physics</subject><issn>0040-6090</issn><issn>1879-2731</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>1986</creationdate><recordtype>article</recordtype><recordid>eNp9kE1rGzEQhkVoIG6Sf5CDDqU0h21Gq11ZuhSKSdqCITkkZyFrZ4mKduVqZIP_fdYfybGngeGZd2Yexm4EfBcg1B1AA5UCA9-0ujUg5qrSZ2wm9NxU9VyKT2z2gVywz0R_AUDUtZyx8vSaSiIcKZSwDWXH3dhxWqMv2fHU8w5xzWPyLnIqriDxMHIKY8GMHe9DHGiPedcNYTNwwohj6PAQ894sGOMmH7oxph1dsfPeRcLrU71kLw_3z4vf1fLx15_Fz2XlpWpKJXuxMlKu5iC1n7IcGgW-FY1WzjsD2jcgdO1abFspWuhWYGopHSAY14CSl-zrMXed078NUrFDID8d40ZMG7J1I0wrTDOBzRH0ORFl7O06h8HlnRVg94rt3p_d-7Na2YNiq6exL6d8R5OgPrvRB_qY1bUCBfWE_ThiOP26DZgt-YCjxy7kybPtUvj_njc6sZCg</recordid><startdate>19861015</startdate><enddate>19861015</enddate><creator>Ermolovich, I.B.</creator><creator>Pavelets, A.M.</creator><creator>Khanat, L.N.</creator><general>Elsevier B.V</general><general>Elsevier Science</general><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7QQ</scope><scope>8FD</scope><scope>JG9</scope></search><sort><creationdate>19861015</creationdate><title>Photosensitivity and spectra of deep local states in sintered films of cadmium selenide and cadmium telluride alloys</title><author>Ermolovich, I.B. ; Pavelets, A.M. ; Khanat, L.N.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c364t-3f1b933b7038ccadae960c51486aca908c40182a5e553150db09233a0e09a4063</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>1986</creationdate><topic>Condensed matter: electronic structure, electrical, magnetic, and optical properties</topic><topic>Electronic transport in condensed matter</topic><topic>Exact sciences and technology</topic><topic>Photoconduction and photovoltaic effects; photodielectric effects</topic><topic>Physics</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Ermolovich, I.B.</creatorcontrib><creatorcontrib>Pavelets, A.M.</creatorcontrib><creatorcontrib>Khanat, L.N.</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Ceramic Abstracts</collection><collection>Technology Research Database</collection><collection>Materials Research Database</collection><jtitle>Thin solid films</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Ermolovich, I.B.</au><au>Pavelets, A.M.</au><au>Khanat, L.N.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Photosensitivity and spectra of deep local states in sintered films of cadmium selenide and cadmium telluride alloys</atitle><jtitle>Thin solid films</jtitle><date>1986-10-15</date><risdate>1986</risdate><volume>143</volume><issue>3</issue><spage>225</spage><epage>235</epage><pages>225-235</pages><issn>0040-6090</issn><eissn>1879-2731</eissn><coden>THSFAP</coden><abstract>The photoconductive and luminescence properties of non-intentionally doped and copper-doped
CdSe
x
Te
1−
x
(
x=0−1) films were studied. The films were prepared by spraying an aqueous suspension of mixtures with varying composition onto ceramic substrate. Both the energy gaps determined using photoconductivity spectra and the maxima of the luminescence bands as functions of the film composition
x were obtained. The correlation of the luminescence intensity and the photoconductivity with
x was established. Using the decay curves of photocurrent excited under “light impact” conditions the electron capture cross-sections of the recombination centres in the films under investigation were estimated. The nature of the recombination centres in CdSe
x
Te
1−
x
(
x=0–1) films both copper free and copper doped are discussed.</abstract><cop>Lausanne</cop><pub>Elsevier B.V</pub><doi>10.1016/0040-6090(86)90176-8</doi><tpages>11</tpages></addata></record> |
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| ispartof | Thin solid films, 1986-10, Vol.143 (3), p.225-235 |
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| language | eng |
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| source | Access via ScienceDirect (Elsevier) |
| subjects | Condensed matter: electronic structure, electrical, magnetic, and optical properties Electronic transport in condensed matter Exact sciences and technology Photoconduction and photovoltaic effects photodielectric effects Physics |
| title | Photosensitivity and spectra of deep local states in sintered films of cadmium selenide and cadmium telluride alloys |
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