Dependence of astigmatism, far-field pattern, and spectral envelope width on active layer thickness of gain guided lasers with narrow stripe geometry
The effects of active layer thickness on the astigmatism, the angle of far-field pattern width parallel to the junction, and the spectral envelope width of a gain guided laser with a narrow stripe geometry have been investigated analytically and experimentally. It is concluded that a large level of...
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| Veröffentlicht in: | Appl. Phys. Lett.; (United States) 1984-06, Vol.44 (12), p.1109-1111 |
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| container_title | Appl. Phys. Lett.; (United States) |
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| creator | MAMINE, T |
| description | The effects of active layer thickness on the astigmatism, the angle of far-field pattern width parallel to the junction, and the spectral envelope width of a gain guided laser with a narrow stripe geometry have been investigated analytically and experimentally. It is concluded that a large level of astigmatism, a narrow far-field pattern width, and a rapid convergence of the spectral envelope width are inherent to the gain guided lasers with thin active layers. |
| doi_str_mv | 10.1063/1.94660 |
| format | Article |
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It is concluded that a large level of astigmatism, a narrow far-field pattern width, and a rapid convergence of the spectral envelope width are inherent to the gain guided lasers with thin active layers.</description><identifier>ISSN: 0003-6951</identifier><identifier>EISSN: 1077-3118</identifier><identifier>DOI: 10.1063/1.94660</identifier><identifier>CODEN: APPLAB</identifier><language>eng</language><publisher>Melville, NY: American Institute of Physics</publisher><subject>AMPLIFICATION ; ANALYTICAL SOLUTION ; DIMENSIONS ; ELECTROMAGNETIC RADIATION ; ENGINEERING ; Exact sciences and technology ; Fundamental areas of phenomenology (including applications) ; GAIN ; LASER MATERIALS ; LASER RADIATION ; LASERS ; LAYERS ; MATERIALS ; OPTICAL PROPERTIES ; Optics ; PHYSICAL PROPERTIES ; Physics ; RADIATIONS ; SEMICONDUCTOR DEVICES 420300 -- Engineering-- Lasers-- (-1989) ; SEMICONDUCTOR LASERS ; Semiconductor lasers; laser diodes ; SHAPE ; THICKNESS</subject><ispartof>Appl. Phys. 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Phys. Lett.; (United States)</title><description>The effects of active layer thickness on the astigmatism, the angle of far-field pattern width parallel to the junction, and the spectral envelope width of a gain guided laser with a narrow stripe geometry have been investigated analytically and experimentally. 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Phys. Lett.; (United States)</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>MAMINE, T</au><aucorp>Semiconductor Research Department, Semiconductor Group, Sony Corporation, Atsugi-Plant, 4-14-1 Asahi-cho, Atsugi-shi 243, Japan</aucorp><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Dependence of astigmatism, far-field pattern, and spectral envelope width on active layer thickness of gain guided lasers with narrow stripe geometry</atitle><jtitle>Appl. Phys. Lett.; (United States)</jtitle><date>1984-06-15</date><risdate>1984</risdate><volume>44</volume><issue>12</issue><spage>1109</spage><epage>1111</epage><pages>1109-1111</pages><issn>0003-6951</issn><eissn>1077-3118</eissn><coden>APPLAB</coden><abstract>The effects of active layer thickness on the astigmatism, the angle of far-field pattern width parallel to the junction, and the spectral envelope width of a gain guided laser with a narrow stripe geometry have been investigated analytically and experimentally. It is concluded that a large level of astigmatism, a narrow far-field pattern width, and a rapid convergence of the spectral envelope width are inherent to the gain guided lasers with thin active layers.</abstract><cop>Melville, NY</cop><pub>American Institute of Physics</pub><doi>10.1063/1.94660</doi><tpages>3</tpages></addata></record> |
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| identifier | ISSN: 0003-6951 |
| ispartof | Appl. Phys. Lett.; (United States), 1984-06, Vol.44 (12), p.1109-1111 |
| issn | 0003-6951 1077-3118 |
| language | eng |
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| source | AIP Digital Archive |
| subjects | AMPLIFICATION ANALYTICAL SOLUTION DIMENSIONS ELECTROMAGNETIC RADIATION ENGINEERING Exact sciences and technology Fundamental areas of phenomenology (including applications) GAIN LASER MATERIALS LASER RADIATION LASERS LAYERS MATERIALS OPTICAL PROPERTIES Optics PHYSICAL PROPERTIES Physics RADIATIONS SEMICONDUCTOR DEVICES 420300 -- Engineering-- Lasers-- (-1989) SEMICONDUCTOR LASERS Semiconductor lasers laser diodes SHAPE THICKNESS |
| title | Dependence of astigmatism, far-field pattern, and spectral envelope width on active layer thickness of gain guided lasers with narrow stripe geometry |
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