Diffusion model for the oxidation of hot-pressed Si sub 3 N sub 4 -Y sub 2 O sub 3 -SiO sub 2 materials

Diffusion model for the oxidation of hot-pressed Si sub 3 N sub 4 -Y sub 2 O sub 3 -SiO sub 2 materials

The authors discuss the results in terms of a diffusion model in which the most relevant parameters are the amount of the grain boundary phase, the width of the diffusion zone, and the concentration gradient at the Si sub 3 N sub 4 /oxide reaction interface.

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Veröffentlicht in:Journal of materials science 1984-01, Vol.19 (3), p.1029-1042
1. Verfasser: Babini, G N
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Sprache:eng
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creator Babini, G N
description The authors discuss the results in terms of a diffusion model in which the most relevant parameters are the amount of the grain boundary phase, the width of the diffusion zone, and the concentration gradient at the Si sub 3 N sub 4 /oxide reaction interface.
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title Diffusion model for the oxidation of hot-pressed Si sub 3 N sub 4 -Y sub 2 O sub 3 -SiO sub 2 materials
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