Integrated 3-D magnetic sensors based on an n-p-n transistor
A novel solid-state silicon sensor that is sensitive to all three components of the magnetic-field vector is presented. The sensor is based on the magnetotransistor principle and is fabricated in standard bipolar IC technology. The lateral part of the collector current has been used to sense the com...
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| Veröffentlicht in: | IEEE electron device letters 1986-03, Vol.EDL-7, p.196-198 |
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| Format: | Artikel |
| Sprache: | eng |
| Online-Zugang: | Volltext |
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