Carrier collection efficiency of Schottky diodes on triode dc sputtered hydrogenated amorphous silicon: transport properties of holes
Spectral response of Schottky diodes has been used to determine the product μpτp (mobility-lifetime product of holes) of sputtered undoped and n-doped hydrogenated amorphous silicon. It is shown that the diffusion of holes in the space-charge region can be neglected in the calculation of the collect...
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| Veröffentlicht in: | J. Appl. Phys.; (United States) 1984-11, Vol.56 (10), p.2806-2811 |
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| container_title | J. Appl. Phys.; (United States) |
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| creator | ARENE, E BAIXERAS, J MENCARAGLIA, D |
| description | Spectral response of Schottky diodes has been used to determine the product μpτp (mobility-lifetime product of holes) of sputtered undoped and n-doped hydrogenated amorphous silicon. It is shown that the diffusion of holes in the space-charge region can be neglected in the calculation of the collection efficiency. Further, the influence of H content as well as dopant content on the transport properties of the holes has been investigated. Our results clearly demonstrate that (i) the incorporation of hydrogen leads to an increase of μpτp, and (ii) the n-type doping results in a drastic decrease of μpτp. Moreover, the behavior of the transport properties of the holes has been interpreted in the framework of the recombination model first proposed by Rose. For our samples, the variation of μpτp is controlled through the hole lifetime by the deep gap states which act as recombination centers. This interpretation has been confirmed by the influence of the photon flux intensity on the collection efficiency. |
| doi_str_mv | 10.1063/1.333814 |
| format | Article |
| fullrecord | <record><control><sourceid>proquest_osti_</sourceid><recordid>TN_cdi_proquest_miscellaneous_24155766</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>24155766</sourcerecordid><originalsourceid>FETCH-LOGICAL-c258t-725aeb4181fe28a8b245e9eaa0f80bfc54fc009096d6cbb760067a09c711cb853</originalsourceid><addsrcrecordid>eNqNkc-KFDEQxhtRcFwFHyGIiJdeK92df95kcFdhwcOu55CurtjRnk6bZA7zAL63GWbx7Kmq4Fcf31fVNK85XHOQ_Qd-3fe95sOTZsdBm1YJAU-bHUDHW22Ued68yPknAOe6N7vmz96lFCgxjMtCWEJcGXkfMNCKJxY9u8c5lvLrxKYQJ8qsAiWdWzYhy9uxFEo0sfk0pfiDVlfq4A4xbXM8ZpbDEjCuH-uOW_MWU2FbihulEs5ans1xofyyeebdkunVY71qvt98fth_ae--3X7df7prsRO6tKoTjsaBa-6p006P3SDIkHPgNYwexeARwICRk8RxVBJAKgcGFec4atFfNW8uujGXYDOGQjhXe2tNbiUXEoSq0LsLVI3-PlIu9hAy0rK4lWok2w1cCCXl_4FCmwq-v4CYYs6JvN1SOLh0shzs-WuW28vXKvr2UdNldIuvV8OQ__GG91pp2f8FRqeYvg</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>24155589</pqid></control><display><type>article</type><title>Carrier collection efficiency of Schottky diodes on triode dc sputtered hydrogenated amorphous silicon: transport properties of holes</title><source>AIP Digital Archive</source><creator>ARENE, E ; BAIXERAS, J ; MENCARAGLIA, D</creator><creatorcontrib>ARENE, E ; BAIXERAS, J ; MENCARAGLIA, D ; Laboratoire de Genie Electrique de Paris (Ecole Superieure d'Electricite, Universites Paris VI et Paris XI), Laboratoire associe au Centre National de la Recherche Scientifique, No. 127, Plateau du Moulon, Gif-sur-Yvette F-91190, France</creatorcontrib><description>Spectral response of Schottky diodes has been used to determine the product μpτp (mobility-lifetime product of holes) of sputtered undoped and n-doped hydrogenated amorphous silicon. It is shown that the diffusion of holes in the space-charge region can be neglected in the calculation of the collection efficiency. Further, the influence of H content as well as dopant content on the transport properties of the holes has been investigated. Our results clearly demonstrate that (i) the incorporation of hydrogen leads to an increase of μpτp, and (ii) the n-type doping results in a drastic decrease of μpτp. Moreover, the behavior of the transport properties of the holes has been interpreted in the framework of the recombination model first proposed by Rose. For our samples, the variation of μpτp is controlled through the hole lifetime by the deep gap states which act as recombination centers. This interpretation has been confirmed by the influence of the photon flux intensity on the collection efficiency.</description><identifier>ISSN: 0021-8979</identifier><identifier>EISSN: 1089-7550</identifier><identifier>DOI: 10.1063/1.333814</identifier><identifier>CODEN: JAPIAU</identifier><language>eng</language><publisher>Woodbury, NY: American Institute of Physics</publisher><subject>140501 - Solar Energy Conversion- Photovoltaic Conversion ; AMORPHOUS STATE ; Applied sciences ; CARRIER LIFETIME ; CARRIER MOBILITY ; CHARGED-PARTICLE TRANSPORT ; CHEMICAL REACTIONS ; DATA ; DIFFUSION ; DIRECT ENERGY CONVERTERS ; EFFICIENCY ; ELEMENTS ; Energy ; Exact sciences and technology ; EXPERIMENTAL DATA ; HOLES ; HYDROGENATION ; INFORMATION ; LIFETIME ; MOBILITY ; Natural energy ; NUMERICAL DATA ; PHOTOELECTRIC CELLS ; PHOTOVOLTAIC CELLS ; RADIATION TRANSPORT ; RECOMBINATION ; SCHOTTKY BARRIER DIODES ; SEMICONDUCTOR DEVICES ; SEMICONDUCTOR DIODES ; SEMIMETALS ; SILICON ; SILICON SOLAR CELLS ; SOLAR CELLS ; SOLAR ENERGY ; SOLAR EQUIPMENT ; SPECTRAL RESPONSE ; SPUTTERING</subject><ispartof>J. Appl. Phys.; (United States), 1984-11, Vol.56 (10), p.2806-2811</ispartof><rights>1985 INIST-CNRS</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c258t-725aeb4181fe28a8b245e9eaa0f80bfc54fc009096d6cbb760067a09c711cb853</citedby><cites>FETCH-LOGICAL-c258t-725aeb4181fe28a8b245e9eaa0f80bfc54fc009096d6cbb760067a09c711cb853</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,776,780,881,27903,27904</link.rule.ids><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=9138786$$DView record in Pascal Francis$$Hfree_for_read</backlink><backlink>$$Uhttps://www.osti.gov/biblio/6156057$$D View this record in Osti.gov$$Hfree_for_read</backlink></links><search><creatorcontrib>ARENE, E</creatorcontrib><creatorcontrib>BAIXERAS, J</creatorcontrib><creatorcontrib>MENCARAGLIA, D</creatorcontrib><creatorcontrib>Laboratoire de Genie Electrique de Paris (Ecole Superieure d'Electricite, Universites Paris VI et Paris XI), Laboratoire associe au Centre National de la Recherche Scientifique, No. 127, Plateau du Moulon, Gif-sur-Yvette F-91190, France</creatorcontrib><title>Carrier collection efficiency of Schottky diodes on triode dc sputtered hydrogenated amorphous silicon: transport properties of holes</title><title>J. Appl. Phys.; (United States)</title><description>Spectral response of Schottky diodes has been used to determine the product μpτp (mobility-lifetime product of holes) of sputtered undoped and n-doped hydrogenated amorphous silicon. It is shown that the diffusion of holes in the space-charge region can be neglected in the calculation of the collection efficiency. Further, the influence of H content as well as dopant content on the transport properties of the holes has been investigated. Our results clearly demonstrate that (i) the incorporation of hydrogen leads to an increase of μpτp, and (ii) the n-type doping results in a drastic decrease of μpτp. Moreover, the behavior of the transport properties of the holes has been interpreted in the framework of the recombination model first proposed by Rose. For our samples, the variation of μpτp is controlled through the hole lifetime by the deep gap states which act as recombination centers. This interpretation has been confirmed by the influence of the photon flux intensity on the collection efficiency.</description><subject>140501 - Solar Energy Conversion- Photovoltaic Conversion</subject><subject>AMORPHOUS STATE</subject><subject>Applied sciences</subject><subject>CARRIER LIFETIME</subject><subject>CARRIER MOBILITY</subject><subject>CHARGED-PARTICLE TRANSPORT</subject><subject>CHEMICAL REACTIONS</subject><subject>DATA</subject><subject>DIFFUSION</subject><subject>DIRECT ENERGY CONVERTERS</subject><subject>EFFICIENCY</subject><subject>ELEMENTS</subject><subject>Energy</subject><subject>Exact sciences and technology</subject><subject>EXPERIMENTAL DATA</subject><subject>HOLES</subject><subject>HYDROGENATION</subject><subject>INFORMATION</subject><subject>LIFETIME</subject><subject>MOBILITY</subject><subject>Natural energy</subject><subject>NUMERICAL DATA</subject><subject>PHOTOELECTRIC CELLS</subject><subject>PHOTOVOLTAIC CELLS</subject><subject>RADIATION TRANSPORT</subject><subject>RECOMBINATION</subject><subject>SCHOTTKY BARRIER DIODES</subject><subject>SEMICONDUCTOR DEVICES</subject><subject>SEMICONDUCTOR DIODES</subject><subject>SEMIMETALS</subject><subject>SILICON</subject><subject>SILICON SOLAR CELLS</subject><subject>SOLAR CELLS</subject><subject>SOLAR ENERGY</subject><subject>SOLAR EQUIPMENT</subject><subject>SPECTRAL RESPONSE</subject><subject>SPUTTERING</subject><issn>0021-8979</issn><issn>1089-7550</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>1984</creationdate><recordtype>article</recordtype><recordid>eNqNkc-KFDEQxhtRcFwFHyGIiJdeK92df95kcFdhwcOu55CurtjRnk6bZA7zAL63GWbx7Kmq4Fcf31fVNK85XHOQ_Qd-3fe95sOTZsdBm1YJAU-bHUDHW22Ued68yPknAOe6N7vmz96lFCgxjMtCWEJcGXkfMNCKJxY9u8c5lvLrxKYQJ8qsAiWdWzYhy9uxFEo0sfk0pfiDVlfq4A4xbXM8ZpbDEjCuH-uOW_MWU2FbihulEs5ans1xofyyeebdkunVY71qvt98fth_ae--3X7df7prsRO6tKoTjsaBa-6p006P3SDIkHPgNYwexeARwICRk8RxVBJAKgcGFec4atFfNW8uujGXYDOGQjhXe2tNbiUXEoSq0LsLVI3-PlIu9hAy0rK4lWok2w1cCCXl_4FCmwq-v4CYYs6JvN1SOLh0shzs-WuW28vXKvr2UdNldIuvV8OQ__GG91pp2f8FRqeYvg</recordid><startdate>19841115</startdate><enddate>19841115</enddate><creator>ARENE, E</creator><creator>BAIXERAS, J</creator><creator>MENCARAGLIA, D</creator><general>American Institute of Physics</general><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>7U5</scope><scope>8FD</scope><scope>L7M</scope><scope>H8D</scope><scope>OTOTI</scope></search><sort><creationdate>19841115</creationdate><title>Carrier collection efficiency of Schottky diodes on triode dc sputtered hydrogenated amorphous silicon: transport properties of holes</title><author>ARENE, E ; BAIXERAS, J ; MENCARAGLIA, D</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c258t-725aeb4181fe28a8b245e9eaa0f80bfc54fc009096d6cbb760067a09c711cb853</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>1984</creationdate><topic>140501 - Solar Energy Conversion- Photovoltaic Conversion</topic><topic>AMORPHOUS STATE</topic><topic>Applied sciences</topic><topic>CARRIER LIFETIME</topic><topic>CARRIER MOBILITY</topic><topic>CHARGED-PARTICLE TRANSPORT</topic><topic>CHEMICAL REACTIONS</topic><topic>DATA</topic><topic>DIFFUSION</topic><topic>DIRECT ENERGY CONVERTERS</topic><topic>EFFICIENCY</topic><topic>ELEMENTS</topic><topic>Energy</topic><topic>Exact sciences and technology</topic><topic>EXPERIMENTAL DATA</topic><topic>HOLES</topic><topic>HYDROGENATION</topic><topic>INFORMATION</topic><topic>LIFETIME</topic><topic>MOBILITY</topic><topic>Natural energy</topic><topic>NUMERICAL DATA</topic><topic>PHOTOELECTRIC CELLS</topic><topic>PHOTOVOLTAIC CELLS</topic><topic>RADIATION TRANSPORT</topic><topic>RECOMBINATION</topic><topic>SCHOTTKY BARRIER DIODES</topic><topic>SEMICONDUCTOR DEVICES</topic><topic>SEMICONDUCTOR DIODES</topic><topic>SEMIMETALS</topic><topic>SILICON</topic><topic>SILICON SOLAR CELLS</topic><topic>SOLAR CELLS</topic><topic>SOLAR ENERGY</topic><topic>SOLAR EQUIPMENT</topic><topic>SPECTRAL RESPONSE</topic><topic>SPUTTERING</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>ARENE, E</creatorcontrib><creatorcontrib>BAIXERAS, J</creatorcontrib><creatorcontrib>MENCARAGLIA, D</creatorcontrib><creatorcontrib>Laboratoire de Genie Electrique de Paris (Ecole Superieure d'Electricite, Universites Paris VI et Paris XI), Laboratoire associe au Centre National de la Recherche Scientifique, No. 127, Plateau du Moulon, Gif-sur-Yvette F-91190, France</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>Aerospace Database</collection><collection>OSTI.GOV</collection><jtitle>J. Appl. Phys.; (United States)</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>ARENE, E</au><au>BAIXERAS, J</au><au>MENCARAGLIA, D</au><aucorp>Laboratoire de Genie Electrique de Paris (Ecole Superieure d'Electricite, Universites Paris VI et Paris XI), Laboratoire associe au Centre National de la Recherche Scientifique, No. 127, Plateau du Moulon, Gif-sur-Yvette F-91190, France</aucorp><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Carrier collection efficiency of Schottky diodes on triode dc sputtered hydrogenated amorphous silicon: transport properties of holes</atitle><jtitle>J. Appl. Phys.; (United States)</jtitle><date>1984-11-15</date><risdate>1984</risdate><volume>56</volume><issue>10</issue><spage>2806</spage><epage>2811</epage><pages>2806-2811</pages><issn>0021-8979</issn><eissn>1089-7550</eissn><coden>JAPIAU</coden><abstract>Spectral response of Schottky diodes has been used to determine the product μpτp (mobility-lifetime product of holes) of sputtered undoped and n-doped hydrogenated amorphous silicon. It is shown that the diffusion of holes in the space-charge region can be neglected in the calculation of the collection efficiency. Further, the influence of H content as well as dopant content on the transport properties of the holes has been investigated. Our results clearly demonstrate that (i) the incorporation of hydrogen leads to an increase of μpτp, and (ii) the n-type doping results in a drastic decrease of μpτp. Moreover, the behavior of the transport properties of the holes has been interpreted in the framework of the recombination model first proposed by Rose. For our samples, the variation of μpτp is controlled through the hole lifetime by the deep gap states which act as recombination centers. This interpretation has been confirmed by the influence of the photon flux intensity on the collection efficiency.</abstract><cop>Woodbury, NY</cop><pub>American Institute of Physics</pub><doi>10.1063/1.333814</doi><tpages>6</tpages></addata></record> |
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| ispartof | J. Appl. Phys.; (United States), 1984-11, Vol.56 (10), p.2806-2811 |
| issn | 0021-8979 1089-7550 |
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| source | AIP Digital Archive |
| subjects | 140501 - Solar Energy Conversion- Photovoltaic Conversion AMORPHOUS STATE Applied sciences CARRIER LIFETIME CARRIER MOBILITY CHARGED-PARTICLE TRANSPORT CHEMICAL REACTIONS DATA DIFFUSION DIRECT ENERGY CONVERTERS EFFICIENCY ELEMENTS Energy Exact sciences and technology EXPERIMENTAL DATA HOLES HYDROGENATION INFORMATION LIFETIME MOBILITY Natural energy NUMERICAL DATA PHOTOELECTRIC CELLS PHOTOVOLTAIC CELLS RADIATION TRANSPORT RECOMBINATION SCHOTTKY BARRIER DIODES SEMICONDUCTOR DEVICES SEMICONDUCTOR DIODES SEMIMETALS SILICON SILICON SOLAR CELLS SOLAR CELLS SOLAR ENERGY SOLAR EQUIPMENT SPECTRAL RESPONSE SPUTTERING |
| title | Carrier collection efficiency of Schottky diodes on triode dc sputtered hydrogenated amorphous silicon: transport properties of holes |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-24T07%3A30%3A28IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_osti_&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Carrier%20collection%20efficiency%20of%20Schottky%20diodes%20on%20triode%20dc%20sputtered%20hydrogenated%20amorphous%20silicon:%20transport%20properties%20of%20holes&rft.jtitle=J.%20Appl.%20Phys.;%20(United%20States)&rft.au=ARENE,%20E&rft.aucorp=Laboratoire%20de%20Genie%20Electrique%20de%20Paris%20(Ecole%20Superieure%20d'Electricite,%20Universites%20Paris%20VI%20et%20Paris%20XI),%20Laboratoire%20associe%20au%20Centre%20National%20de%20la%20Recherche%20Scientifique,%20No.%20127,%20Plateau%20du%20Moulon,%20Gif-sur-Yvette%20F-91190,%20France&rft.date=1984-11-15&rft.volume=56&rft.issue=10&rft.spage=2806&rft.epage=2811&rft.pages=2806-2811&rft.issn=0021-8979&rft.eissn=1089-7550&rft.coden=JAPIAU&rft_id=info:doi/10.1063/1.333814&rft_dat=%3Cproquest_osti_%3E24155766%3C/proquest_osti_%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=24155589&rft_id=info:pmid/&rfr_iscdi=true |