Experimental performance of the buried-channel acoustic charge transport device
High-speed electron transport is accomplished in a new type of buried-channel charge transfer device which is based on the nonlinear acoustoelectric interaction between large amplitude surface acoustic waves (SAW) and electrons in GaAs. The performance of the acoustic charge transport (ACT) device i...
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| Veröffentlicht in: | IEEE electron device letters 1983-11, Vol.4 (11), p.396-399 |
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| container_end_page | 399 |
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| container_issue | 11 |
| container_start_page | 396 |
| container_title | IEEE electron device letters |
| container_volume | 4 |
| creator | Hoskins, M.J. Bogus, E.G. Hunsinger, B.J. |
| description | High-speed electron transport is accomplished in a new type of buried-channel charge transfer device which is based on the nonlinear acoustoelectric interaction between large amplitude surface acoustic waves (SAW) and electrons in GaAs. The performance of the acoustic charge transport (ACT) device is enhanced by design improvements which provide precise channel definition and charge injection structures. A transfer efficiency in excess of 0.996 has been measured in an experimental device operating at the SAW clock frequency of 358 MHz. |
| doi_str_mv | 10.1109/EDL.1983.25778 |
| format | Article |
| fullrecord | <record><control><sourceid>proquest_RIE</sourceid><recordid>TN_cdi_proquest_miscellaneous_24129219</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><ieee_id>1483522</ieee_id><sourcerecordid>24129219</sourcerecordid><originalsourceid>FETCH-LOGICAL-c348t-c5c116a4cf6abf8339b7370aae8bf5797b29882488e4fd4b0374f57530bd4ff23</originalsourceid><addsrcrecordid>eNqFkD1PwzAQhi0EEqWwsrB4QGwJ_oztEUH5kCp1gdly3DMNSpNgpwj-PS6tYGS60-l5X50ehM4pKSkl5np2Ny-p0bxkUil9gCZUSl0QWfFDNCFK0IJTUh2jk5TeCKFCKDFBi9nnALFZQze6Fuc19HHtOg-4D3hcAa43sYFl4Veu66DFzvebNDYe50N8BTxG16WhjyNewkfj4RQdBdcmONvPKXq5nz3fPhbzxcPT7c288FzosfDSU1o54UPl6qA5N7XiijgHug5SGVUzozUTWoMIS1ETrkS-S07qpQiB8Sm62vUOsX_fQBrtukke2tZ1kD-0TCsuDeP_g4Iyw6jJYLkDfexTihDskL24-GUpsVvBNgu2W8H2R3AOXO6bXfKuDdmEb9JvynBTVYpk7GKHNQDw1yk0l4zxb366g-o</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>24129219</pqid></control><display><type>article</type><title>Experimental performance of the buried-channel acoustic charge transport device</title><source>IEEE Electronic Library (IEL)</source><creator>Hoskins, M.J. ; Bogus, E.G. ; Hunsinger, B.J.</creator><creatorcontrib>Hoskins, M.J. ; Bogus, E.G. ; Hunsinger, B.J.</creatorcontrib><description>High-speed electron transport is accomplished in a new type of buried-channel charge transfer device which is based on the nonlinear acoustoelectric interaction between large amplitude surface acoustic waves (SAW) and electrons in GaAs. The performance of the acoustic charge transport (ACT) device is enhanced by design improvements which provide precise channel definition and charge injection structures. A transfer efficiency in excess of 0.996 has been measured in an experimental device operating at the SAW clock frequency of 358 MHz.</description><identifier>ISSN: 0741-3106</identifier><identifier>EISSN: 1558-0563</identifier><identifier>DOI: 10.1109/EDL.1983.25778</identifier><identifier>CODEN: EDLEDZ</identifier><language>eng</language><publisher>New York, NY: IEEE</publisher><subject>Acoustic devices ; Acoustic measurements ; Acoustic waves ; Applied sciences ; Charge coupled devices ; Charge transfer devices ; Clocks ; Electronics ; Electrons ; Exact sciences and technology ; Frequency measurement ; Gallium arsenide ; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices ; Surface acoustic wave devices ; Surface acoustic waves</subject><ispartof>IEEE electron device letters, 1983-11, Vol.4 (11), p.396-399</ispartof><rights>1984 INIST-CNRS</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c348t-c5c116a4cf6abf8339b7370aae8bf5797b29882488e4fd4b0374f57530bd4ff23</citedby></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/1483522$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>314,776,780,792,27901,27902,54733</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/1483522$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=9396670$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>Hoskins, M.J.</creatorcontrib><creatorcontrib>Bogus, E.G.</creatorcontrib><creatorcontrib>Hunsinger, B.J.</creatorcontrib><title>Experimental performance of the buried-channel acoustic charge transport device</title><title>IEEE electron device letters</title><addtitle>LED</addtitle><description>High-speed electron transport is accomplished in a new type of buried-channel charge transfer device which is based on the nonlinear acoustoelectric interaction between large amplitude surface acoustic waves (SAW) and electrons in GaAs. The performance of the acoustic charge transport (ACT) device is enhanced by design improvements which provide precise channel definition and charge injection structures. A transfer efficiency in excess of 0.996 has been measured in an experimental device operating at the SAW clock frequency of 358 MHz.</description><subject>Acoustic devices</subject><subject>Acoustic measurements</subject><subject>Acoustic waves</subject><subject>Applied sciences</subject><subject>Charge coupled devices</subject><subject>Charge transfer devices</subject><subject>Clocks</subject><subject>Electronics</subject><subject>Electrons</subject><subject>Exact sciences and technology</subject><subject>Frequency measurement</subject><subject>Gallium arsenide</subject><subject>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</subject><subject>Surface acoustic wave devices</subject><subject>Surface acoustic waves</subject><issn>0741-3106</issn><issn>1558-0563</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>1983</creationdate><recordtype>article</recordtype><recordid>eNqFkD1PwzAQhi0EEqWwsrB4QGwJ_oztEUH5kCp1gdly3DMNSpNgpwj-PS6tYGS60-l5X50ehM4pKSkl5np2Ny-p0bxkUil9gCZUSl0QWfFDNCFK0IJTUh2jk5TeCKFCKDFBi9nnALFZQze6Fuc19HHtOg-4D3hcAa43sYFl4Veu66DFzvebNDYe50N8BTxG16WhjyNewkfj4RQdBdcmONvPKXq5nz3fPhbzxcPT7c288FzosfDSU1o54UPl6qA5N7XiijgHug5SGVUzozUTWoMIS1ETrkS-S07qpQiB8Sm62vUOsX_fQBrtukke2tZ1kD-0TCsuDeP_g4Iyw6jJYLkDfexTihDskL24-GUpsVvBNgu2W8H2R3AOXO6bXfKuDdmEb9JvynBTVYpk7GKHNQDw1yk0l4zxb366g-o</recordid><startdate>19831101</startdate><enddate>19831101</enddate><creator>Hoskins, M.J.</creator><creator>Bogus, E.G.</creator><creator>Hunsinger, B.J.</creator><general>IEEE</general><general>Institute of Electrical and Electronics Engineers</general><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>8FD</scope><scope>H8D</scope><scope>L7M</scope><scope>7SP</scope></search><sort><creationdate>19831101</creationdate><title>Experimental performance of the buried-channel acoustic charge transport device</title><author>Hoskins, M.J. ; Bogus, E.G. ; Hunsinger, B.J.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c348t-c5c116a4cf6abf8339b7370aae8bf5797b29882488e4fd4b0374f57530bd4ff23</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>1983</creationdate><topic>Acoustic devices</topic><topic>Acoustic measurements</topic><topic>Acoustic waves</topic><topic>Applied sciences</topic><topic>Charge coupled devices</topic><topic>Charge transfer devices</topic><topic>Clocks</topic><topic>Electronics</topic><topic>Electrons</topic><topic>Exact sciences and technology</topic><topic>Frequency measurement</topic><topic>Gallium arsenide</topic><topic>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</topic><topic>Surface acoustic wave devices</topic><topic>Surface acoustic waves</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Hoskins, M.J.</creatorcontrib><creatorcontrib>Bogus, E.G.</creatorcontrib><creatorcontrib>Hunsinger, B.J.</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Technology Research Database</collection><collection>Aerospace Database</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>Electronics & Communications Abstracts</collection><jtitle>IEEE electron device letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Hoskins, M.J.</au><au>Bogus, E.G.</au><au>Hunsinger, B.J.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Experimental performance of the buried-channel acoustic charge transport device</atitle><jtitle>IEEE electron device letters</jtitle><stitle>LED</stitle><date>1983-11-01</date><risdate>1983</risdate><volume>4</volume><issue>11</issue><spage>396</spage><epage>399</epage><pages>396-399</pages><issn>0741-3106</issn><eissn>1558-0563</eissn><coden>EDLEDZ</coden><abstract>High-speed electron transport is accomplished in a new type of buried-channel charge transfer device which is based on the nonlinear acoustoelectric interaction between large amplitude surface acoustic waves (SAW) and electrons in GaAs. The performance of the acoustic charge transport (ACT) device is enhanced by design improvements which provide precise channel definition and charge injection structures. A transfer efficiency in excess of 0.996 has been measured in an experimental device operating at the SAW clock frequency of 358 MHz.</abstract><cop>New York, NY</cop><pub>IEEE</pub><doi>10.1109/EDL.1983.25778</doi><tpages>4</tpages></addata></record> |
| fulltext | fulltext_linktorsrc |
| identifier | ISSN: 0741-3106 |
| ispartof | IEEE electron device letters, 1983-11, Vol.4 (11), p.396-399 |
| issn | 0741-3106 1558-0563 |
| language | eng |
| recordid | cdi_proquest_miscellaneous_24129219 |
| source | IEEE Electronic Library (IEL) |
| subjects | Acoustic devices Acoustic measurements Acoustic waves Applied sciences Charge coupled devices Charge transfer devices Clocks Electronics Electrons Exact sciences and technology Frequency measurement Gallium arsenide Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Surface acoustic wave devices Surface acoustic waves |
| title | Experimental performance of the buried-channel acoustic charge transport device |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-02-09T19%3A05%3A33IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_RIE&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Experimental%20performance%20of%20the%20buried-channel%20acoustic%20charge%20transport%20device&rft.jtitle=IEEE%20electron%20device%20letters&rft.au=Hoskins,%20M.J.&rft.date=1983-11-01&rft.volume=4&rft.issue=11&rft.spage=396&rft.epage=399&rft.pages=396-399&rft.issn=0741-3106&rft.eissn=1558-0563&rft.coden=EDLEDZ&rft_id=info:doi/10.1109/EDL.1983.25778&rft_dat=%3Cproquest_RIE%3E24129219%3C/proquest_RIE%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=24129219&rft_id=info:pmid/&rft_ieee_id=1483522&rfr_iscdi=true |