Vapour growth mechanism of silicon layers by dichlorosilane decomposition
This work aims to calculate the growth rates of epitaxial and polycrystalline Si from the SiH 2Cl 2-H 2 system by using a simple kinetic model for the heterogeneous reaction. The growth process assumes reaction sequences which differ according to the high, low or intermediate value of the substrate...
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| Veröffentlicht in: | Journal of crystal growth 1983, Vol.61 (1), p.102-110 |
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| container_start_page | 102 |
| container_title | Journal of crystal growth |
| container_volume | 61 |
| creator | Morosanu, C.E. Iosif, D. Segal, E. |
| description | This work aims to calculate the growth rates of epitaxial and polycrystalline Si from the SiH
2Cl
2-H
2 system by using a simple kinetic model for the heterogeneous reaction. The growth process assumes reaction sequences which differ according to the high, low or intermediate value of the substrate temperature. The kinetic analysis is carried out by including the homogeneous and heterogeneous equilibria established in the system and by using the steady-state approximation. According to the rate equations found, which are in good agreement with the experimental data, the Si growth rate is proportional to the SiH
2Cl
2 concentration in the gas phase, irrespective of temperature, and depends on
P
-1/2
H
2
or
P
-1
H
2
for different pressuress of the system. In the homogeneous mechanism, the Si growth rate depends only on the SiH
2Cl
2 concentration. |
| doi_str_mv | 10.1016/0022-0248(83)90286-5 |
| format | Article |
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2Cl
2-H
2 system by using a simple kinetic model for the heterogeneous reaction. The growth process assumes reaction sequences which differ according to the high, low or intermediate value of the substrate temperature. The kinetic analysis is carried out by including the homogeneous and heterogeneous equilibria established in the system and by using the steady-state approximation. According to the rate equations found, which are in good agreement with the experimental data, the Si growth rate is proportional to the SiH
2Cl
2 concentration in the gas phase, irrespective of temperature, and depends on
P
-1/2
H
2
or
P
-1
H
2
for different pressuress of the system. In the homogeneous mechanism, the Si growth rate depends only on the SiH
2Cl
2 concentration.</description><identifier>ISSN: 0022-0248</identifier><identifier>EISSN: 1873-5002</identifier><identifier>DOI: 10.1016/0022-0248(83)90286-5</identifier><language>eng</language><publisher>Elsevier B.V</publisher><ispartof>Journal of crystal growth, 1983, Vol.61 (1), p.102-110</ispartof><rights>1983</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c335t-3fff19a69877fd534c18a2e6e43d6359063b88e680ddc71bab4998e193bcde043</citedby><cites>FETCH-LOGICAL-c335t-3fff19a69877fd534c18a2e6e43d6359063b88e680ddc71bab4998e193bcde043</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://dx.doi.org/10.1016/0022-0248(83)90286-5$$EHTML$$P50$$Gelsevier$$H</linktohtml><link.rule.ids>314,780,784,3550,4024,27923,27924,27925,45995</link.rule.ids></links><search><creatorcontrib>Morosanu, C.E.</creatorcontrib><creatorcontrib>Iosif, D.</creatorcontrib><creatorcontrib>Segal, E.</creatorcontrib><title>Vapour growth mechanism of silicon layers by dichlorosilane decomposition</title><title>Journal of crystal growth</title><description>This work aims to calculate the growth rates of epitaxial and polycrystalline Si from the SiH
2Cl
2-H
2 system by using a simple kinetic model for the heterogeneous reaction. The growth process assumes reaction sequences which differ according to the high, low or intermediate value of the substrate temperature. The kinetic analysis is carried out by including the homogeneous and heterogeneous equilibria established in the system and by using the steady-state approximation. According to the rate equations found, which are in good agreement with the experimental data, the Si growth rate is proportional to the SiH
2Cl
2 concentration in the gas phase, irrespective of temperature, and depends on
P
-1/2
H
2
or
P
-1
H
2
for different pressuress of the system. In the homogeneous mechanism, the Si growth rate depends only on the SiH
2Cl
2 concentration.</description><issn>0022-0248</issn><issn>1873-5002</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>1983</creationdate><recordtype>article</recordtype><recordid>eNp9kEFLxDAQhYMouK7-Aw85iR6qSZO2yUWQZdWFBS_qNaTJ1I20TU26yv57U1c8ehqGee_x5kPonJJrSmh5Q0ieZyTn4lKwK0lyUWbFAZpRUbGsSMdDNPuTHKOTGN8JST5KZmj1qge_Dfgt-K9xgzswG9272GHf4OhaZ3yPW72DEHG9w9aZTeuDTxfdA7ZgfDekbXS-P0VHjW4jnP3OOXq5Xz4vHrP108NqcbfODGPFmLGmaajUpRRV1diCcUOFzqEEzmzJCklKVgsBpSDWmorWuuZSCqCS1cYC4WyOLva5Q_AfW4ij6lw00E6N_DaqnFPKpJyEfC80qXAM0KghuE6HnaJETdzUBEVNUJRg6oebKpLtdm-D9MSng6CicdAbsC6AGZX17v-AbwpGdSs</recordid><startdate>1983</startdate><enddate>1983</enddate><creator>Morosanu, C.E.</creator><creator>Iosif, D.</creator><creator>Segal, E.</creator><general>Elsevier B.V</general><scope>AAYXX</scope><scope>CITATION</scope><scope>7U5</scope><scope>8FD</scope><scope>L7M</scope></search><sort><creationdate>1983</creationdate><title>Vapour growth mechanism of silicon layers by dichlorosilane decomposition</title><author>Morosanu, C.E. ; Iosif, D. ; Segal, E.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c335t-3fff19a69877fd534c18a2e6e43d6359063b88e680ddc71bab4998e193bcde043</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>1983</creationdate><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Morosanu, C.E.</creatorcontrib><creatorcontrib>Iosif, D.</creatorcontrib><creatorcontrib>Segal, E.</creatorcontrib><collection>CrossRef</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Journal of crystal growth</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Morosanu, C.E.</au><au>Iosif, D.</au><au>Segal, E.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Vapour growth mechanism of silicon layers by dichlorosilane decomposition</atitle><jtitle>Journal of crystal growth</jtitle><date>1983</date><risdate>1983</risdate><volume>61</volume><issue>1</issue><spage>102</spage><epage>110</epage><pages>102-110</pages><issn>0022-0248</issn><eissn>1873-5002</eissn><abstract>This work aims to calculate the growth rates of epitaxial and polycrystalline Si from the SiH
2Cl
2-H
2 system by using a simple kinetic model for the heterogeneous reaction. The growth process assumes reaction sequences which differ according to the high, low or intermediate value of the substrate temperature. The kinetic analysis is carried out by including the homogeneous and heterogeneous equilibria established in the system and by using the steady-state approximation. According to the rate equations found, which are in good agreement with the experimental data, the Si growth rate is proportional to the SiH
2Cl
2 concentration in the gas phase, irrespective of temperature, and depends on
P
-1/2
H
2
or
P
-1
H
2
for different pressuress of the system. In the homogeneous mechanism, the Si growth rate depends only on the SiH
2Cl
2 concentration.</abstract><pub>Elsevier B.V</pub><doi>10.1016/0022-0248(83)90286-5</doi><tpages>9</tpages></addata></record> |
| fulltext | fulltext |
| identifier | ISSN: 0022-0248 |
| ispartof | Journal of crystal growth, 1983, Vol.61 (1), p.102-110 |
| issn | 0022-0248 1873-5002 |
| language | eng |
| recordid | cdi_proquest_miscellaneous_24113994 |
| source | Elsevier ScienceDirect Journals Complete |
| title | Vapour growth mechanism of silicon layers by dichlorosilane decomposition |
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