Electron-hole recombination at the Si-SiO2 interface

We have measured the surface recombination current J(ns,ps) at high quality thermally grown Si-SiO2 interfaces as a function of the surface density of electrons and holes, ns and ps. We find that the recombination is dominated by centers whose electron capture cross section is about 100 times greate...

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Veröffentlicht in:	Applied physics letters 1986-01, Vol.48 (3), p.245-247
Hauptverfasser:	YABLONOVITCH, E, SWANSON, R. M, EADES, W. D, WEINBERGER, B. R
Format:	Artikel
Sprache:	eng
Schlagworte:	Condensed matter: electronic structure, electrical, magnetic, and optical properties Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures Exact sciences and technology Physics Surface conductivity and carrier phenomena
Online-Zugang:	Volltext
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