The model of carbon induced defects in GaAs

The model of carbon induced defects in GaAs

A model of defect states caused by incorporation of carbon in GaAs crystal lattice is proposed. The carbon atoms form three defect states: an acceptor state, C As, and two donor states, C Gs and (C-C) As Thermodynamic calculations of the carbon incorporation in GaAs crystals and films grown from Ga-...

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Veröffentlicht in:Materials research bulletin 1983-01, Vol.18 (12), p.1521-1528
Hauptverfasser: Akkerman, Z.L., Borisova, L.A.
Format: Artikel
Sprache:eng
Schlagworte:
Condensed matter: electronic structure, electrical, magnetic, and optical properties
Electron states
Exact sciences and technology
Impurity and defect levels
Physics
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Zusammenfassung:A model of defect states caused by incorporation of carbon in GaAs crystal lattice is proposed. The carbon atoms form three defect states: an acceptor state, C As, and two donor states, C Gs and (C-C) As Thermodynamic calculations of the carbon incorporation in GaAs crystals and films grown from Ga-solutions at 800–1240°C are presented.
ISSN:0025-5408
1873-4227
DOI:10.1016/0025-5408(83)90193-9