Fast Magneto-Ionic Switching of Interface Anisotropy Using Yttria-Stabilized Zirconia Gate Oxide

Voltage control of interfacial magnetism has been greatly highlighted in spintronics research for many years, as it might enable ultralow power technologies. Among a few suggested approaches, magneto-ionic control of magnetism has demonstrated large modulation of magnetic anisotropy. Moreover, the r...

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Veröffentlicht in:	Nano letters 2020-05, Vol.20 (5), p.3435-3441
Hauptverfasser:	Lee, Ki-Young, Jo, Sujin, Tan, Aik Jun, Huang, Mantao, Choi, Dongwon, Park, Jung Hoon, Ji, Ho-Il, Son, Ji-Won, Chang, Joonyeon, Beach, Geoffrey S. D, Woo, Seonghoon
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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