Thermal conversion of GaAs
The conversion of semi-insulating GaAs to p type as a result of heat treatment in H2 was studied by photoluminescence (PL), secondary-ion mass spectrometry (SIMS), and transport measurements. The SIMS measurements resulted in the direct chemical identification of Mn near the heated surface. The corr...
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| Veröffentlicht in: | Journal of applied physics 1980-09, Vol.51 (9), p.4861-4869 |
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| container_title | Journal of applied physics |
| container_volume | 51 |
| creator | Klein, P B Nordquist, P E R Siebenmann, P G |
| description | The conversion of semi-insulating GaAs to p type as a result of heat treatment in H2 was studied by photoluminescence (PL), secondary-ion mass spectrometry (SIMS), and transport measurements. The SIMS measurements resulted in the direct chemical identification of Mn near the heated surface. The correlation of the SIMS profiles with the results of PL and transport measurements indicated that Mn acceptors are responsible for the type conversion, and that substantial concentrations of Mn(?1017/cm3) are found in thin (1–3 μm) layers near the surface. The results of studies of samples heated under several different conditions showed that the Mn layers were not introduced by contamination from external sources during heat treatment, but were probably due to the presence of a bulk Mn concentration ( |
| doi_str_mv | 10.1063/1.328321 |
| format | Article |
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The SIMS measurements resulted in the direct chemical identification of Mn near the heated surface. The correlation of the SIMS profiles with the results of PL and transport measurements indicated that Mn acceptors are responsible for the type conversion, and that substantial concentrations of Mn(?1017/cm3) are found in thin (1–3 μm) layers near the surface. The results of studies of samples heated under several different conditions showed that the Mn layers were not introduced by contamination from external sources during heat treatment, but were probably due to the presence of a bulk Mn concentration (<3×1015/cm3): during heat treatment the Mn diffuses to the surface, probably assisted by the in diffusion of Ga vacancies, as suggested by Zucca. Photoluminescence profiling measurements and the correlation between the SIMS and PL results indicate that the 1.41-eV PL band that is associated with the type-converted surface is due to recombination at a Mn acceptor on a Ga site, and not at a next-nearest-neighbor arsenic vacancy-amphoteric acceptor complex.</description><identifier>ISSN: 0021-8979</identifier><identifier>EISSN: 1089-7550</identifier><identifier>DOI: 10.1063/1.328321</identifier><language>eng</language><ispartof>Journal of applied physics, 1980-09, Vol.51 (9), p.4861-4869</ispartof><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c353t-fc7fe506ad0ddb0d5478cc2f2d6a3e33e4663a8d62787e80cdd4eee15a451ede3</citedby><cites>FETCH-LOGICAL-c353t-fc7fe506ad0ddb0d5478cc2f2d6a3e33e4663a8d62787e80cdd4eee15a451ede3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,780,784,27924,27925</link.rule.ids></links><search><creatorcontrib>Klein, P B</creatorcontrib><creatorcontrib>Nordquist, P E R</creatorcontrib><creatorcontrib>Siebenmann, P G</creatorcontrib><title>Thermal conversion of GaAs</title><title>Journal of applied physics</title><description>The conversion of semi-insulating GaAs to p type as a result of heat treatment in H2 was studied by photoluminescence (PL), secondary-ion mass spectrometry (SIMS), and transport measurements. The SIMS measurements resulted in the direct chemical identification of Mn near the heated surface. The correlation of the SIMS profiles with the results of PL and transport measurements indicated that Mn acceptors are responsible for the type conversion, and that substantial concentrations of Mn(?1017/cm3) are found in thin (1–3 μm) layers near the surface. The results of studies of samples heated under several different conditions showed that the Mn layers were not introduced by contamination from external sources during heat treatment, but were probably due to the presence of a bulk Mn concentration (<3×1015/cm3): during heat treatment the Mn diffuses to the surface, probably assisted by the in diffusion of Ga vacancies, as suggested by Zucca. Photoluminescence profiling measurements and the correlation between the SIMS and PL results indicate that the 1.41-eV PL band that is associated with the type-converted surface is due to recombination at a Mn acceptor on a Ga site, and not at a next-nearest-neighbor arsenic vacancy-amphoteric acceptor complex.</description><issn>0021-8979</issn><issn>1089-7550</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>1980</creationdate><recordtype>article</recordtype><recordid>eNqN0E1LAzEUheEgCo5VcO1qVuJm6r25k0lmWYqtQsFNXYeY3ODIfNSkFfz3KvUHuDqbh7N4hbhGmCM0dI9zkoYknogCwbSVVgpORQEgsTKtbs_FRc7vAIiG2kLcbN84Da4v_TR-csrdNJZTLNdukS_FWXR95qu_nYmX1cN2-VhtntdPy8Wm8qRoX0WvIytoXIAQXiGoWhvvZZShccREXDcNORMaqY1mAz6EmplRuVohB6aZuD3-7tL0ceC8t0OXPfe9G3k6ZCupRUlY_w_KVv_AuyP0aco5cbS71A0ufVkE-1vJoj1Wom-98Vey</recordid><startdate>19800901</startdate><enddate>19800901</enddate><creator>Klein, P B</creator><creator>Nordquist, P E R</creator><creator>Siebenmann, P G</creator><scope>AAYXX</scope><scope>CITATION</scope><scope>7U5</scope><scope>8FD</scope><scope>L7M</scope><scope>8BQ</scope><scope>JG9</scope></search><sort><creationdate>19800901</creationdate><title>Thermal conversion of GaAs</title><author>Klein, P B ; Nordquist, P E R ; Siebenmann, P G</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c353t-fc7fe506ad0ddb0d5478cc2f2d6a3e33e4663a8d62787e80cdd4eee15a451ede3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>1980</creationdate><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Klein, P B</creatorcontrib><creatorcontrib>Nordquist, P E R</creatorcontrib><creatorcontrib>Siebenmann, P G</creatorcontrib><collection>CrossRef</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>METADEX</collection><collection>Materials Research Database</collection><jtitle>Journal of applied physics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Klein, P B</au><au>Nordquist, P E R</au><au>Siebenmann, P G</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Thermal conversion of GaAs</atitle><jtitle>Journal of applied physics</jtitle><date>1980-09-01</date><risdate>1980</risdate><volume>51</volume><issue>9</issue><spage>4861</spage><epage>4869</epage><pages>4861-4869</pages><issn>0021-8979</issn><eissn>1089-7550</eissn><abstract>The conversion of semi-insulating GaAs to p type as a result of heat treatment in H2 was studied by photoluminescence (PL), secondary-ion mass spectrometry (SIMS), and transport measurements. The SIMS measurements resulted in the direct chemical identification of Mn near the heated surface. The correlation of the SIMS profiles with the results of PL and transport measurements indicated that Mn acceptors are responsible for the type conversion, and that substantial concentrations of Mn(?1017/cm3) are found in thin (1–3 μm) layers near the surface. The results of studies of samples heated under several different conditions showed that the Mn layers were not introduced by contamination from external sources during heat treatment, but were probably due to the presence of a bulk Mn concentration (<3×1015/cm3): during heat treatment the Mn diffuses to the surface, probably assisted by the in diffusion of Ga vacancies, as suggested by Zucca. Photoluminescence profiling measurements and the correlation between the SIMS and PL results indicate that the 1.41-eV PL band that is associated with the type-converted surface is due to recombination at a Mn acceptor on a Ga site, and not at a next-nearest-neighbor arsenic vacancy-amphoteric acceptor complex.</abstract><doi>10.1063/1.328321</doi><tpages>9</tpages></addata></record> |
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| ispartof | Journal of applied physics, 1980-09, Vol.51 (9), p.4861-4869 |
| issn | 0021-8979 1089-7550 |
| language | eng |
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| source | AIP Digital Archive |
| title | Thermal conversion of GaAs |
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