Surface Core-Level Binding-Energy Shifts for GaAs(110) and GaSb(110)

Surface Core-Level Binding-Energy Shifts for GaAs(110) and GaSb(110)

Surface 3d and 4d core-levell binding-energy shifts have been resolved in photoemission from GaAs(110) and GaSb(110), which yield new information on semiconductor surface reconstruction. The shifts ( approx 0.3 eV) are toward higher (lower) binding energies for the surface cations (anions), in agree...

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Veröffentlicht in:Physical review letters 1980-08, Vol.45 (8), p.656-659
Hauptverfasser: Eastman, D. E., Chiang, T. -C., Heimann, P., Himpsel, F. J.
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container_title Physical review letters
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creator Eastman, D. E.
Chiang, T. -C.
Heimann, P.
Himpsel, F. J.
description Surface 3d and 4d core-levell binding-energy shifts have been resolved in photoemission from GaAs(110) and GaSb(110), which yield new information on semiconductor surface reconstruction. The shifts ( approx 0.3 eV) are toward higher (lower) binding energies for the surface cations (anions), in agreement with a simple model involving the known surface relaxation of GaAs(110) with a geometry-dependent initial-state charge transfer. Surface core-excitation binding energies, core-level widths, escape depths, etc., are re-evaluated.16 refs.--AA
doi_str_mv 10.1103/PhysRevLett.45.656
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title Surface Core-Level Binding-Energy Shifts for GaAs(110) and GaSb(110)
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