Nonvolatile molecular memory with the multilevel states based on MoS2 nanochannel field effect transistor through tuning gate voltage to control molecular configurations

A new flexible memory element is crucial for mobile and wearable electronics. A new concept for memory operation and innovative device structure with new materials is certainly required to address the bottleneck of memory applications now and in the future. We report a new nonvolatile molecular memo...

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Veröffentlicht in:	Nanotechnology 2020-04, Vol.31 (27), p.275204-275204, Article 275204
Hauptverfasser:	Lan, Yann-Wen, Hong, Chuan-Jie, Chen, Po-Chun, Lin, Yun-Yan, Yang, Chih-Hao, Chu, Chia-Jung, Li, Ming-Yang, Li, Lain-Jong, Su, Chun-Jung, Wu, Bo-Wei, Hou, Tuo-Hung, Li, Kai-Shin, Zhong, Yuan-Liang
Format:	Artikel
Sprache:	eng
Schlagworte:	2D materials Materials Science Materials Science, Multidisciplinary molecular memory MoS multilevel memory Nanoscience & Nanotechnology nonvolatile memory Physical Sciences Physics Physics, Applied Science & Technology Science & Technology - Other Topics Technology
Online-Zugang:	Volltext
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