Paraconductivity of Ge-covered tin films
The effect of a protective germanium layer on the excess electrical conductivity of thin superconducting films of tin has been investigated. The films were deposited on glass substrate held at room temperature. The results show that the values of the pair-breaking parameter for Ge-covered films are...
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| Veröffentlicht in: | Solid state communications 1980-01, Vol.34 (2), p.113-115 |
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| container_end_page | 115 |
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| container_issue | 2 |
| container_start_page | 113 |
| container_title | Solid state communications |
| container_volume | 34 |
| creator | Parashar, R.S. Dheer, P.N. |
| description | The effect of a protective germanium layer on the excess electrical conductivity of thin superconducting films of tin has been investigated. The films were deposited on glass substrate held at room temperature. The results show that the values of the pair-breaking parameter for Ge-covered films are much higher than those for bare films. |
| doi_str_mv | 10.1016/0038-1098(80)91245-4 |
| format | Article |
| fullrecord | <record><control><sourceid>proquest_cross</sourceid><recordid>TN_cdi_proquest_miscellaneous_23829192</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><els_id>0038109880912454</els_id><sourcerecordid>23829192</sourcerecordid><originalsourceid>FETCH-LOGICAL-c335t-e73aae562a4f02c75318fa02d19aa4390e044e77ce5b0dffcec9ea7ef5a24e3c3</originalsourceid><addsrcrecordid>eNp9kE1LAzEURYMoWKv_wMWspC6iLx8zSTaCFK1CQRe6DjHzApHppCYzhf57WysuXd3NuRfOJeSSwQ0D1twCCE0ZGD3TcG0YlzWVR2TCtDKUq6Y5JpM_5JSclfIJAEorNiGzV5edT307-iFu4rCtUqgWSH3aYMa2GmJfhdityjk5Ca4rePGbU_L--PA2f6LLl8Xz_H5JvRD1QFEJ57BuuJMBuFe1YDo44C0zzklhAEFKVMpj_QFtCB69Qacw1I5LFF5MydVhd53T14hlsKtYPHad6zGNxXKhuWGG70B5AH1OpWQMdp3jyuWtZWD3t9i9s907Ww325xYrd7W7Qw13EpuI2RYfsffYxox-sG2K_w98A88CaRA</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>23829192</pqid></control><display><type>article</type><title>Paraconductivity of Ge-covered tin films</title><source>Elsevier ScienceDirect Journals</source><creator>Parashar, R.S. ; Dheer, P.N.</creator><creatorcontrib>Parashar, R.S. ; Dheer, P.N.</creatorcontrib><description>The effect of a protective germanium layer on the excess electrical conductivity of thin superconducting films of tin has been investigated. The films were deposited on glass substrate held at room temperature. The results show that the values of the pair-breaking parameter for Ge-covered films are much higher than those for bare films.</description><identifier>ISSN: 0038-1098</identifier><identifier>EISSN: 1879-2766</identifier><identifier>DOI: 10.1016/0038-1098(80)91245-4</identifier><language>eng</language><publisher>Elsevier Ltd</publisher><ispartof>Solid state communications, 1980-01, Vol.34 (2), p.113-115</ispartof><rights>1980</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c335t-e73aae562a4f02c75318fa02d19aa4390e044e77ce5b0dffcec9ea7ef5a24e3c3</citedby><cites>FETCH-LOGICAL-c335t-e73aae562a4f02c75318fa02d19aa4390e044e77ce5b0dffcec9ea7ef5a24e3c3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://www.sciencedirect.com/science/article/pii/0038109880912454$$EHTML$$P50$$Gelsevier$$H</linktohtml><link.rule.ids>314,776,780,3537,27901,27902,65306</link.rule.ids></links><search><creatorcontrib>Parashar, R.S.</creatorcontrib><creatorcontrib>Dheer, P.N.</creatorcontrib><title>Paraconductivity of Ge-covered tin films</title><title>Solid state communications</title><description>The effect of a protective germanium layer on the excess electrical conductivity of thin superconducting films of tin has been investigated. The films were deposited on glass substrate held at room temperature. The results show that the values of the pair-breaking parameter for Ge-covered films are much higher than those for bare films.</description><issn>0038-1098</issn><issn>1879-2766</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>1980</creationdate><recordtype>article</recordtype><recordid>eNp9kE1LAzEURYMoWKv_wMWspC6iLx8zSTaCFK1CQRe6DjHzApHppCYzhf57WysuXd3NuRfOJeSSwQ0D1twCCE0ZGD3TcG0YlzWVR2TCtDKUq6Y5JpM_5JSclfIJAEorNiGzV5edT307-iFu4rCtUqgWSH3aYMa2GmJfhdityjk5Ca4rePGbU_L--PA2f6LLl8Xz_H5JvRD1QFEJ57BuuJMBuFe1YDo44C0zzklhAEFKVMpj_QFtCB69Qacw1I5LFF5MydVhd53T14hlsKtYPHad6zGNxXKhuWGG70B5AH1OpWQMdp3jyuWtZWD3t9i9s907Ww325xYrd7W7Qw13EpuI2RYfsffYxox-sG2K_w98A88CaRA</recordid><startdate>19800101</startdate><enddate>19800101</enddate><creator>Parashar, R.S.</creator><creator>Dheer, P.N.</creator><general>Elsevier Ltd</general><scope>AAYXX</scope><scope>CITATION</scope><scope>8BQ</scope><scope>8FD</scope><scope>JG9</scope></search><sort><creationdate>19800101</creationdate><title>Paraconductivity of Ge-covered tin films</title><author>Parashar, R.S. ; Dheer, P.N.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c335t-e73aae562a4f02c75318fa02d19aa4390e044e77ce5b0dffcec9ea7ef5a24e3c3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>1980</creationdate><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Parashar, R.S.</creatorcontrib><creatorcontrib>Dheer, P.N.</creatorcontrib><collection>CrossRef</collection><collection>METADEX</collection><collection>Technology Research Database</collection><collection>Materials Research Database</collection><jtitle>Solid state communications</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Parashar, R.S.</au><au>Dheer, P.N.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Paraconductivity of Ge-covered tin films</atitle><jtitle>Solid state communications</jtitle><date>1980-01-01</date><risdate>1980</risdate><volume>34</volume><issue>2</issue><spage>113</spage><epage>115</epage><pages>113-115</pages><issn>0038-1098</issn><eissn>1879-2766</eissn><abstract>The effect of a protective germanium layer on the excess electrical conductivity of thin superconducting films of tin has been investigated. The films were deposited on glass substrate held at room temperature. The results show that the values of the pair-breaking parameter for Ge-covered films are much higher than those for bare films.</abstract><pub>Elsevier Ltd</pub><doi>10.1016/0038-1098(80)91245-4</doi><tpages>3</tpages></addata></record> |
| fulltext | fulltext |
| identifier | ISSN: 0038-1098 |
| ispartof | Solid state communications, 1980-01, Vol.34 (2), p.113-115 |
| issn | 0038-1098 1879-2766 |
| language | eng |
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| source | Elsevier ScienceDirect Journals |
| title | Paraconductivity of Ge-covered tin films |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-02-03T12%3A23%3A52IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_cross&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Paraconductivity%20of%20Ge-covered%20tin%20films&rft.jtitle=Solid%20state%20communications&rft.au=Parashar,%20R.S.&rft.date=1980-01-01&rft.volume=34&rft.issue=2&rft.spage=113&rft.epage=115&rft.pages=113-115&rft.issn=0038-1098&rft.eissn=1879-2766&rft_id=info:doi/10.1016/0038-1098(80)91245-4&rft_dat=%3Cproquest_cross%3E23829192%3C/proquest_cross%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=23829192&rft_id=info:pmid/&rft_els_id=0038109880912454&rfr_iscdi=true |