Plastic deformation and fracture resulting from stresses caused by differential thermal contraction in GaP/Si heterostructures
Cleavage cracks form in thick (≳5 μm) GaP layers deposited epitaxially on Si during the cooldown after growth. The distribution of stresses caused by differential thermal contraction in such heterostructures has been analyzed, and suggests that stress relief through plastic deformation explains why...
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Veröffentlicht in: | Applied physics letters 1980-07, Vol.37 (2), p.218-220 |
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Hauptverfasser: | , |
Format: | Artikel |
Sprache: | eng |
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