Photoluminescence from Mg-implanted, epitaxial, and semi-insulating InP
Photoluminescence measurements were made to study the behavior of Mg implants in InP. Mg ions were implanted at an energy of 120 keV into vapor phase epitaxial (VPE) and Fe-doped, semi-insulating (SI) InP at doses of 1×1012–1×1015 cm−2 at room temperature. Encapsulation was with Si3N4 followed by fa...
Gespeichert in:
| Veröffentlicht in: | Journal of applied physics 1981, Vol.52 (2), p.969-977 |
|---|---|
| Hauptverfasser: | , , |
| Format: | Artikel |
| Sprache: | eng |
| Online-Zugang: | Volltext |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
Schreiben Sie den ersten Kommentar!