TFT Channel Materials for Display Applications: From Amorphous Silicon to Transition Metal Dichalcogenides

As the need for super‐high‐resolution displays with various form factors has increased, it has become necessary to produce high‐performance thin‐film transistors (TFTs) that enable faster switching and higher current driving of each pixel in the display. Over the past few decades, hydrogenated amorphous silicon (a‐Si:H) has been widely utilized as a TFT channel material. More recently, to meet the requirement of new types of displays such as organic light‐emitting diode displays, and also to overcome the performance and reliability issues of a‐Si:H, low‐temperature polycrystalline silicon and amorphous oxide semiconductors have partly replaced a‐Si:H channel materials. Basic material properties and device structures of TFTs in commercial displays are explored, and then the potential of atomically thin layered transition metal dichalcogenides as next‐generation channel materials is discussed. High‐performance thin‐film‐transistor (TFT) channel materials are essential components in future displays with novel functions and form factors. The basic materials properties and their TFT applications are discussed, focusing mainly on their performance. In addition, other key considerations such as bias‐ and light‐stability are also covered.