Permanent photodoping of plasmonic gallium-ZnO nanocrystals
Donor dopants in oxide semiconductors are compensated not only by valuable electrons but also by other point defects, leading to a decrease in electric conductivity and infrared absorption. We demonstrate that the electron compensation mechanism in Ga doped ZnO nanocrystals can be promoted by photod...
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| Veröffentlicht in: | Nanoscale 2020-03, Vol.12 (12), p.6624-6629 |
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| container_issue | 12 |
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| container_title | Nanoscale |
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| creator | Zukuls, Anzelms Egl tis, Raivis Käämbre, Tanel Ignatans, Reinis Šmits, Krišj nis Rubenis, Kristaps Za s, Dzintars Šutka, Andris |
| description | Donor dopants in oxide semiconductors are compensated not only by valuable electrons but also by other point defects, leading to a decrease in electric conductivity and infrared absorption. We demonstrate that the electron compensation mechanism in Ga doped ZnO nanocrystals can be promoted by photodoping. Unexpectedly, the electrons from photodoping are stable in the open air for months.
The concentration of delocalized electrons in plasmonic metal oxide nanocrystals can be increased permanently by photodoping because the electron compensation becoming the dominant compensation mechanism for the aliovalent donor dopant. |
| doi_str_mv | 10.1039/d0nr01005g |
| format | Article |
| fullrecord | <record><control><sourceid>proquest_pubme</sourceid><recordid>TN_cdi_proquest_miscellaneous_2376730958</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>2376730958</sourcerecordid><originalsourceid>FETCH-LOGICAL-c399t-15c3b1bb2351e96c0e3294838711825c81120b2453b7bfc4ddb1c4764e4e1f23</originalsourceid><addsrcrecordid>eNp90c9LwzAUB_AgipvTi3el4kWEapKX_gieZOoUhhPZyUtp0nR2tElN2sP-e6ObEzx4eoHvh8fjG4SOCb4iGPh1gbXFBONosYOGFDMcAiR0d_uO2QAdOLfEOOYQwz4aACUx4IQP0c2Lsk2ule6C9t10pjBtpReBKYO2zl1jdCWDRV7XVd-Eb3oW6FwbaVeuy2t3iPZKP9TRZo7Q_OF-Pn4Mp7PJ0_h2GkrgvAtJJEEQIShERPFYYgWUsxTShJCURjIlhGJBWQQiEaVkRSGIZEnMFFOkpDBCF-u1rTUfvXJd1lROqrr2Z5veZRSSOAHMo9TT8z90aXqr_XFepcB8HxHx6nKtpDXOWVVmra2a3K4ygrOvRrM7_Pz63ejE49PNyl40qtjSnwo9OFkD6-Q2_f0Sn5_9l2dtUcInnWeELA</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>2383404051</pqid></control><display><type>article</type><title>Permanent photodoping of plasmonic gallium-ZnO nanocrystals</title><source>Royal Society Of Chemistry Journals 2008-</source><creator>Zukuls, Anzelms ; Egl tis, Raivis ; Käämbre, Tanel ; Ignatans, Reinis ; Šmits, Krišj nis ; Rubenis, Kristaps ; Za s, Dzintars ; Šutka, Andris</creator><creatorcontrib>Zukuls, Anzelms ; Egl tis, Raivis ; Käämbre, Tanel ; Ignatans, Reinis ; Šmits, Krišj nis ; Rubenis, Kristaps ; Za s, Dzintars ; Šutka, Andris</creatorcontrib><description>Donor dopants in oxide semiconductors are compensated not only by valuable electrons but also by other point defects, leading to a decrease in electric conductivity and infrared absorption. We demonstrate that the electron compensation mechanism in Ga doped ZnO nanocrystals can be promoted by photodoping. Unexpectedly, the electrons from photodoping are stable in the open air for months.
The concentration of delocalized electrons in plasmonic metal oxide nanocrystals can be increased permanently by photodoping because the electron compensation becoming the dominant compensation mechanism for the aliovalent donor dopant.</description><identifier>ISSN: 2040-3364</identifier><identifier>EISSN: 2040-3372</identifier><identifier>DOI: 10.1039/d0nr01005g</identifier><identifier>PMID: 32163079</identifier><language>eng</language><publisher>England: Royal Society of Chemistry</publisher><subject>Electrical resistivity ; Electrons ; Gallium ; Infrared absorption ; Nanocrystals ; Point defects ; Zinc oxide</subject><ispartof>Nanoscale, 2020-03, Vol.12 (12), p.6624-6629</ispartof><rights>Copyright Royal Society of Chemistry 2020</rights><lds50>peer_reviewed</lds50><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c399t-15c3b1bb2351e96c0e3294838711825c81120b2453b7bfc4ddb1c4764e4e1f23</citedby><cites>FETCH-LOGICAL-c399t-15c3b1bb2351e96c0e3294838711825c81120b2453b7bfc4ddb1c4764e4e1f23</cites><orcidid>0000-0002-9806-5448 ; 0000-0002-5739-0164</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,780,784,27922,27923</link.rule.ids><backlink>$$Uhttps://www.ncbi.nlm.nih.gov/pubmed/32163079$$D View this record in MEDLINE/PubMed$$Hfree_for_read</backlink></links><search><creatorcontrib>Zukuls, Anzelms</creatorcontrib><creatorcontrib>Egl tis, Raivis</creatorcontrib><creatorcontrib>Käämbre, Tanel</creatorcontrib><creatorcontrib>Ignatans, Reinis</creatorcontrib><creatorcontrib>Šmits, Krišj nis</creatorcontrib><creatorcontrib>Rubenis, Kristaps</creatorcontrib><creatorcontrib>Za s, Dzintars</creatorcontrib><creatorcontrib>Šutka, Andris</creatorcontrib><title>Permanent photodoping of plasmonic gallium-ZnO nanocrystals</title><title>Nanoscale</title><addtitle>Nanoscale</addtitle><description>Donor dopants in oxide semiconductors are compensated not only by valuable electrons but also by other point defects, leading to a decrease in electric conductivity and infrared absorption. We demonstrate that the electron compensation mechanism in Ga doped ZnO nanocrystals can be promoted by photodoping. Unexpectedly, the electrons from photodoping are stable in the open air for months.
The concentration of delocalized electrons in plasmonic metal oxide nanocrystals can be increased permanently by photodoping because the electron compensation becoming the dominant compensation mechanism for the aliovalent donor dopant.</description><subject>Electrical resistivity</subject><subject>Electrons</subject><subject>Gallium</subject><subject>Infrared absorption</subject><subject>Nanocrystals</subject><subject>Point defects</subject><subject>Zinc oxide</subject><issn>2040-3364</issn><issn>2040-3372</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2020</creationdate><recordtype>article</recordtype><recordid>eNp90c9LwzAUB_AgipvTi3el4kWEapKX_gieZOoUhhPZyUtp0nR2tElN2sP-e6ObEzx4eoHvh8fjG4SOCb4iGPh1gbXFBONosYOGFDMcAiR0d_uO2QAdOLfEOOYQwz4aACUx4IQP0c2Lsk2ule6C9t10pjBtpReBKYO2zl1jdCWDRV7XVd-Eb3oW6FwbaVeuy2t3iPZKP9TRZo7Q_OF-Pn4Mp7PJ0_h2GkrgvAtJJEEQIShERPFYYgWUsxTShJCURjIlhGJBWQQiEaVkRSGIZEnMFFOkpDBCF-u1rTUfvXJd1lROqrr2Z5veZRSSOAHMo9TT8z90aXqr_XFepcB8HxHx6nKtpDXOWVVmra2a3K4ygrOvRrM7_Pz63ejE49PNyl40qtjSnwo9OFkD6-Q2_f0Sn5_9l2dtUcInnWeELA</recordid><startdate>20200328</startdate><enddate>20200328</enddate><creator>Zukuls, Anzelms</creator><creator>Egl tis, Raivis</creator><creator>Käämbre, Tanel</creator><creator>Ignatans, Reinis</creator><creator>Šmits, Krišj nis</creator><creator>Rubenis, Kristaps</creator><creator>Za s, Dzintars</creator><creator>Šutka, Andris</creator><general>Royal Society of Chemistry</general><scope>NPM</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SR</scope><scope>7U5</scope><scope>8BQ</scope><scope>8FD</scope><scope>F28</scope><scope>FR3</scope><scope>JG9</scope><scope>L7M</scope><scope>7X8</scope><orcidid>https://orcid.org/0000-0002-9806-5448</orcidid><orcidid>https://orcid.org/0000-0002-5739-0164</orcidid></search><sort><creationdate>20200328</creationdate><title>Permanent photodoping of plasmonic gallium-ZnO nanocrystals</title><author>Zukuls, Anzelms ; Egl tis, Raivis ; Käämbre, Tanel ; Ignatans, Reinis ; Šmits, Krišj nis ; Rubenis, Kristaps ; Za s, Dzintars ; Šutka, Andris</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c399t-15c3b1bb2351e96c0e3294838711825c81120b2453b7bfc4ddb1c4764e4e1f23</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2020</creationdate><topic>Electrical resistivity</topic><topic>Electrons</topic><topic>Gallium</topic><topic>Infrared absorption</topic><topic>Nanocrystals</topic><topic>Point defects</topic><topic>Zinc oxide</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Zukuls, Anzelms</creatorcontrib><creatorcontrib>Egl tis, Raivis</creatorcontrib><creatorcontrib>Käämbre, Tanel</creatorcontrib><creatorcontrib>Ignatans, Reinis</creatorcontrib><creatorcontrib>Šmits, Krišj nis</creatorcontrib><creatorcontrib>Rubenis, Kristaps</creatorcontrib><creatorcontrib>Za s, Dzintars</creatorcontrib><creatorcontrib>Šutka, Andris</creatorcontrib><collection>PubMed</collection><collection>CrossRef</collection><collection>Engineered Materials Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>METADEX</collection><collection>Technology Research Database</collection><collection>ANTE: Abstracts in New Technology & Engineering</collection><collection>Engineering Research Database</collection><collection>Materials Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>MEDLINE - Academic</collection><jtitle>Nanoscale</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Zukuls, Anzelms</au><au>Egl tis, Raivis</au><au>Käämbre, Tanel</au><au>Ignatans, Reinis</au><au>Šmits, Krišj nis</au><au>Rubenis, Kristaps</au><au>Za s, Dzintars</au><au>Šutka, Andris</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Permanent photodoping of plasmonic gallium-ZnO nanocrystals</atitle><jtitle>Nanoscale</jtitle><addtitle>Nanoscale</addtitle><date>2020-03-28</date><risdate>2020</risdate><volume>12</volume><issue>12</issue><spage>6624</spage><epage>6629</epage><pages>6624-6629</pages><issn>2040-3364</issn><eissn>2040-3372</eissn><abstract>Donor dopants in oxide semiconductors are compensated not only by valuable electrons but also by other point defects, leading to a decrease in electric conductivity and infrared absorption. We demonstrate that the electron compensation mechanism in Ga doped ZnO nanocrystals can be promoted by photodoping. Unexpectedly, the electrons from photodoping are stable in the open air for months.
The concentration of delocalized electrons in plasmonic metal oxide nanocrystals can be increased permanently by photodoping because the electron compensation becoming the dominant compensation mechanism for the aliovalent donor dopant.</abstract><cop>England</cop><pub>Royal Society of Chemistry</pub><pmid>32163079</pmid><doi>10.1039/d0nr01005g</doi><tpages>6</tpages><orcidid>https://orcid.org/0000-0002-9806-5448</orcidid><orcidid>https://orcid.org/0000-0002-5739-0164</orcidid><oa>free_for_read</oa></addata></record> |
| fulltext | fulltext |
| identifier | ISSN: 2040-3364 |
| ispartof | Nanoscale, 2020-03, Vol.12 (12), p.6624-6629 |
| issn | 2040-3364 2040-3372 |
| language | eng |
| recordid | cdi_proquest_miscellaneous_2376730958 |
| source | Royal Society Of Chemistry Journals 2008- |
| subjects | Electrical resistivity Electrons Gallium Infrared absorption Nanocrystals Point defects Zinc oxide |
| title | Permanent photodoping of plasmonic gallium-ZnO nanocrystals |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-14T13%3A40%3A01IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_pubme&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Permanent%20photodoping%20of%20plasmonic%20gallium-ZnO%20nanocrystals&rft.jtitle=Nanoscale&rft.au=Zukuls,%20Anzelms&rft.date=2020-03-28&rft.volume=12&rft.issue=12&rft.spage=6624&rft.epage=6629&rft.pages=6624-6629&rft.issn=2040-3364&rft.eissn=2040-3372&rft_id=info:doi/10.1039/d0nr01005g&rft_dat=%3Cproquest_pubme%3E2376730958%3C/proquest_pubme%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=2383404051&rft_id=info:pmid/32163079&rfr_iscdi=true |