A Simple Dual-Ion Doping Method for Stabilizing Li-Rich Materials and Suppressing Voltage Decay

A gentle method is used to treat the precursor to induce the doping of SO4 2– and Ni2+. The doped SO4 2– induces the formation of oxygen vacancies and defects, which are beneficial for inhibition of the loss of O2–, stabilization of the structure, and amelioration of voltage decay, and the doped Ni2...

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Veröffentlicht in:	ACS applied materials & interfaces 2020-03, Vol.12 (12), p.13996-14004
Hauptverfasser:	Yu, Yang, Yang, Zhe, Zhong, Jianjian, Liu, Yanying, Li, Jianling, Wang, Xindong, Kang, Feiyu
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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